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          首頁 >BFP640>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          BFP640

          NPN Silicon Germanium RF Transistor

          NPN Silicon Germanium RF Transistor ? High gain low noise RF transistor ? Provides outstanding performance for a wide range of wireless applications ? Ideal for CDMA and WLAN applications ? Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz ?

          文件:272.86 Kbytes 頁數(shù):8 Pages

          INFINEON

          英飛凌

          BFP640

          NPN Silicon Germanium RF Transistor

          NPN Silicon Germanium RF Transistor ? High gain low noise RF transistor ? Provides outstanding performance for a wide range of wireless applications ? Ideal for CDMA and WLAN applications ? Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz ?

          文件:154.94 Kbytes 頁數(shù):10 Pages

          INFINEON

          英飛凌

          BFP640

          NPN Silicon Germanium RF Transistor

          NPN Silicon Germanium RF Transistor ? High gain low noise RF transistor ? Provides outstanding performance for a wide range of wireless applications ? Ideal for CDMA and WLAN applications ? Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz ?

          文件:154.94 Kbytes 頁數(shù):10 Pages

          INFINEON

          英飛凌

          BFP640

          Low Noise Silicon Germanium Bipolar RF Transistor

          文件:1.36937 Mbytes 頁數(shù):28 Pages

          INFINEON

          英飛凌

          BFP640

          NPN Silicon Germanium RF Transistor

          文件:154.94 Kbytes 頁數(shù):10 Pages

          INFINEON

          英飛凌

          BFP640

          低噪聲RF 管基

          ? 高增益低噪聲射頻晶體管\n? 為各種無線應(yīng)用提供出色的性能\n? 非常適合 CDMA 和 WLAN 應(yīng)用\n? ?1.8 GHz 時出色的噪聲系數(shù) F = 0.65 dB,6 GHz 時出色的噪聲系數(shù) F = 1.2 dB\n? 高最大穩(wěn)定增益:1.8 GHz 時 Gms = 24 dB\n? 鍍金處理,可靠性更高\n? 70 GHz fT-硅鍺技術(shù)\n? 無鉛(符合 RoHS 標準)封裝;

          Infineon

          英飛凌

          BFP640E6327

          NPN Silicon Germanium RF Transistor

          NPN Silicon Germanium RF Transistor ? High gain low noise RF transistor ? Provides outstanding performance for a wide range of wireless applications ? Ideal for CDMA and WLAN applications ? Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz ?

          文件:154.94 Kbytes 頁數(shù):10 Pages

          INFINEON

          英飛凌

          BFP640F

          NPN Silicon Germanium RF Transistor

          Product Brief The BFP640F is linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCE = 4.1 V and currents up to IC = 50 mA

          文件:190.83 Kbytes 頁數(shù):6 Pages

          INFINEON

          英飛凌

          BFP640FESD

          Robust Low Noise Silicon Germanium Bipolar RF Transistor

          Product Brief The BFP640FESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.1 V and currents up to IC = 50 mA.

          文件:1.64277 Mbytes 頁數(shù):28 Pages

          INFINEON

          英飛凌

          BFP640H6327

          NPN Silicon Germanium RF Transistor

          NPN Silicon Germanium RF Transistor ? High gain low noise RF transistor ? Provides outstanding performance for a wide range of wireless applications ? Ideal for CDMA and WLAN applications ? Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz ?

          文件:154.94 Kbytes 頁數(shù):10 Pages

          INFINEON

          英飛凌

          技術(shù)參數(shù)

          • Gmax:

            27.50 dB @900 MHz

          • ICmax:

            50 mA

          • NFmin:

            0.60 dB @900 MHz

          • OIP3(@900 MHz):

            25.5 dBm

          • OP1dB(@900 MHz):

            12 dBm

          • Ptot:

            200 mW

          • VCEOmax:

            4.1 V

          • Package:

            SOT343

          供應(yīng)商型號品牌批號封裝庫存備注價格
          Infineon(英飛凌)
          24+
          標準封裝
          7098
          原廠渠道供應(yīng),大量現(xiàn)貨,原型號開票。
          詢價
          INFINEON/英飛凌
          25+
          SOT343
          20300
          INFINEON/英飛凌原裝特價BFP640即刻詢購立享優(yōu)惠#長期有貨
          詢價
          INFINEON
          SOT-343
          30216
          提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
          詢價
          INFINEON
          16+/17+
          SOT343
          3500
          原裝正品現(xiàn)貨供應(yīng)56
          詢價
          INFINEON/英飛凌
          20+
          SOT343
          120000
          原裝正品 可含稅交易
          詢價
          INFINEON/英飛凌
          2021+
          SOT343
          9000
          原裝現(xiàn)貨,隨時歡迎詢價
          詢價
          INFINEON/英飛凌
          23+
          SOT343
          100586
          全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
          詢價
          INFINEON/英飛凌
          24+
          SOT-343
          159697
          明嘉萊只做原裝正品現(xiàn)貨
          詢價
          INFINEON
          2024+
          N/A
          70000
          柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
          詢價
          Infineon(英飛凌)
          23+
          N/A
          12000
          一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
          詢價
          更多BFP640供應(yīng)商 更新時間2026-1-18 22:59:00
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