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          首頁(yè) >BFP>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          BFP740

          NPN Silicon Germanium RF Transistor

          Product Brief The BFP740 is a linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.0 V and currents up to IC = 45

          文件:38.66 Kbytes 頁(yè)數(shù):4 Pages

          INFINEON

          英飛凌

          BFP740

          NPN Transistors

          ■ Features ● High gain ultra low noise RF transistor ● High maximum stable gain ● Gold metallization for extra high reliability ● 150 GHz fT-Silicon Germanium technology ● Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0.85 dB at 6 GHz

          文件:1.78828 Mbytes 頁(yè)數(shù):6 Pages

          KEXIN

          科信電子

          BFP740F

          NPN Silicon Germanium RF Transist

          NPN Silicon Germanium RF Transistor ? High gain ultra low noise RF transistor ? Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more ? Ideal for CDMA and WLAN applications ? Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise

          文件:147.89 Kbytes 頁(yè)數(shù):10 Pages

          INFINEON

          英飛凌

          BFP740F

          NPN Silicon Germanium RF Transistor

          NPN Silicon Germanium RF Transistor ? High gain ultra low noise RF transistor ? Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more ? Ideal for CDMA and WLAN applications ? Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise

          文件:157.87 Kbytes 頁(yè)數(shù):10 Pages

          INFINEON

          英飛凌

          BFP740FE6327

          NPN Silicon Germanium RF Transist

          NPN Silicon Germanium RF Transistor ? High gain ultra low noise RF transistor ? Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more ? Ideal for CDMA and WLAN applications ? Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise

          文件:147.89 Kbytes 頁(yè)數(shù):10 Pages

          INFINEON

          英飛凌

          BFP740FESD

          Robust High Performance Low Noise Bipolar RF Transistor

          Product Brief The BFP740FESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.2 V and currents up to IC = 45 mA.

          文件:1.93887 Mbytes 頁(yè)數(shù):29 Pages

          INFINEON

          英飛凌

          BFP750

          High Linearity Low Noise SiGe:C NPN RF Transistor

          Product Brief The BFP750 is a wideband linear low noise NPN bipolar RF transistor. The device is based on Infineons reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4 V and currents up to IC = 120 mA. Wit

          文件:1.8587 Mbytes 頁(yè)數(shù):27 Pages

          INFINEON

          英飛凌

          BFP81

          絲?。?a target="_blank" title="Marking" href="/fa/marking.html">FA;Package:SOT-143;Silicon NPN Planar RF Transistor

          Features ? Small feedback capacitance ? Low noise figure ? High transition frequency ? Lead (Pb)-free component ? Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications ?? RF amplifier up to 2 GHz, especially for mobile telephone.

          文件:152.79 Kbytes 頁(yè)數(shù):10 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          BFP81

          NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.)

          NPN Silicon RF Transistor ? For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.

          文件:59.96 Kbytes 頁(yè)數(shù):7 Pages

          SIEMENS

          西門(mén)子

          BFP92

          Silicon NPN Planar RF Transistor

          Features ● High power gain ● Low noise figure ● High transition frequency Applications ?? RF amplifier up to GHz range, especially for wide band antenna amplifiers.

          文件:173.78 Kbytes 頁(yè)數(shù):10 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          產(chǎn)品屬性

          • 產(chǎn)品編號(hào):

            1.5SMBJ36CA

          • 制造商:

            Bourns Inc.

          • 類(lèi)別:

            電路保護(hù) > TVS - 二極管

          • 系列:

            1.5SMBJ

          • 包裝:

            卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶

          • 類(lèi)型:

            齊納

          • 電壓 - 反向斷態(tài)(典型值):

            36V

          • 電壓 - 擊穿(最小值):

            40V

          • 不同 Ipp 時(shí)電壓 - 箝位(最大值):

            58.1V

          • 電流 - 峰值脈沖 (10/1000μs):

            25.9A

          • 功率 - 峰值脈沖:

            1500W(1.5kW)

          • 電源線路保護(hù):

            無(wú)

          • 應(yīng)用:

            通用

          • 工作溫度:

            -55°C ~ 150°C(TJ)

          • 安裝類(lèi)型:

            表面貼裝型

          • 封裝/外殼:

            DO-214AA,SMB

          • 供應(yīng)商器件封裝:

            SMB(DO-214AA)

          • 描述:

            DIO TVS VRWM 36V 1500W BIDIR SMB

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          24+
          N/A
          54000
          一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
          詢(xún)價(jià)
          BOURNS
          25+
          SMB(DO-214AA)
          18746
          樣件支持,可原廠排單訂貨!
          詢(xún)價(jià)
          Bourns
          25+
          N/A
          18798
          正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
          詢(xún)價(jià)
          BOURNS
          24+
          con
          35960
          查現(xiàn)貨到京北通宇商城
          詢(xún)價(jià)
          LITTEIFUSE
          2121+
          SMB
          360000
          上傳都是百分之百進(jìn)口原裝現(xiàn)貨
          詢(xún)價(jià)
          更多BFP供應(yīng)商 更新時(shí)間2026-1-19 11:06:00
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