P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4187 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications Features VDS (V) = -40V ID = -45A (VGS = -1

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AOSMD

萬(wàn)國(guó)半導(dǎo)體

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -45A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 17mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

無(wú)錫固電

P-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AOD4187 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications ? VDS (V) = -40V\n? ID = -45A (VGS = -10V)\n? RDS(ON) < 17m? (VGS = -10V)\n? RDS(ON) < 23m? (VGS = -4.5V)\n? 100% UIS Tested!\n? 100% Rg Tested!?;

AOS

美國(guó)萬(wàn)代

P-Channel 40 V (D-S) MOSFET

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VBSEMI

微碧半導(dǎo)體

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -55A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10mΩ(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

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ISC

無(wú)錫固電

BROADBAND xDSL, HPN, CMCs

BROADBAND ACCESS: xDSL, HPN, CMCs Broadband has come a long way in the past few years. Pulse continues to lead the way with a broad range of components that enable twisted-pair copper, fiber and coaxial cable to deliver high-speed services to homes and businesses. Pulse components are also us

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PULSE