N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD436 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOD436 is Pb-free (meets ROHS & Sony 259 specifica

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AOSMD

萬國半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOU436 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOU436 is Pb-free (meets ROHS & Sony 259 specifications). AOU436L is a Green Product order

文件：71.66 Kbytes 頁數(shù)：5 Pages

AOSMD

萬國半導(dǎo)體

N-Channel 30-V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested ? Compliant to RoHS Directive 2011/65/EU APPLICATIONS ? OR-ing ? Server ? DC/DC

文件：994.15 Kbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 57A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

無錫固電