N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD448 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD448 is Pb-free (meets ROHS & Sony 259 specifications). AO

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AOSMD

萬國半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AOD448 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD448 is Pb-free (meets ROHS & Sony 259 specifications). AOD448L is VDS(V) = 30V\nID= 75A (VGS= 10V)\nRDS(ON)< 5m?(VGS= 10V)\nRDS(ON)< 9m?(VGS= 4.5V);

AOS

美國萬代

N-Channel 30-V (D-S) MOSFET

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VBSEMI

微碧半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 35mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

無錫固電

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOU448 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU448 is Pb-free (meets ROHS & Sony 259 specifications). AOU4

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AOSMD

萬國半導(dǎo)體