N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD438 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOD438 is Pb-free (meets ROHS & Sony 259 specificat

文件：160.57 Kbytes 頁(yè)數(shù)：5 Pages

AOSMD

萬(wàn)國(guó)半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOU438 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOU438 is Pb-free (meets ROHS & Sony 259 specificatio

文件：72.24 Kbytes 頁(yè)數(shù)：5 Pages

AOSMD

萬(wàn)國(guó)半導(dǎo)體

N-Channel 30-V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested ? Compliant to RoHS Directive 2011/65/EU APPLICATIONS ? OR-ing ? Server ? DC/DC

文件：994.15 Kbytes 頁(yè)數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 85A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：353.31 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電