N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD472 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD472 is Pb-free (meets ROHS & Sony 259 specifications). AOD4

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AOSMD

萬(wàn)國(guó)半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AOD472 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD472 is Pb-free (meets ROHS & Sony 259 specifications). AOD472L is VDS(V) = 25V\nID= 50A (VGS= 10V)\nRDS(ON)<6 m?(VGS= 10V)\nRDS(ON)<9.5 m?(VGS= 4.5V);

AOS

美國(guó)萬(wàn)代

N-Channel 30-V (D-S) MOSFET

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VBSEMI

微碧半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 35mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

無(wú)錫固電

N-Channel Enhancement Mode Field Effect Transistor

General Description ? Latest Trench Power MOSFET technology ? Very Low RDS(on) at 4.5VGS ? Low Gate Charge ? High Current Capability ? RoHS and Halogen-Free Compliant Application ? DC/DC Converters in Computing ? Isolated DC/DC Converters in Telecom and Industrial Product Summary VDS

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AOSMD

萬(wàn)國(guó)半導(dǎo)體