N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD452 is Pb-free (meets ROHS & Sony 259 specifications). AOD

文件：121.91 Kbytes 頁數(shù)：5 Pages

AOSMD

萬國半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 55A@ TC=25℃ ·Drain Source Voltage : VDSS= 25V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：318.19 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

MOSFET N-CH 25V 55A TO-252

AOS

美國萬代

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 55A@ TC=25℃ ·Drain Source Voltage : VDSS= 25V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：318.2 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel SDMOSTM POWER Transistor

General Description The AOD452A/L is fabricated with SDMOS trench technology that combines excellent RDS(ON)with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applicatio

文件：289.28 Kbytes 頁數(shù)：7 Pages

AOSMD

萬國半導體

N-Channel SDMOSTM POWER Transistor

General Description The AOD452A/L is fabricated with SDMOS trench technology that combines excellent RDS(ON)with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applicatio

文件：289.28 Kbytes 頁數(shù)：7 Pages

AOSMD

萬國半導體

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD452 is Pb-free (meets ROHS & Sony 259 specifications). AOD

文件：121.91 Kbytes 頁數(shù)：5 Pages

AOSMD

萬國半導體

N-Channel SDMOS POWER Transistor

General Description\nThe AOD452A/L is fabricated with SDMOS trench technology that combines excellent RDS(ON)with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications ? VDS(V) = 25V\n? ID= 55A (VGS= 10V)\n? RDS(ON)< 8m?(VGS= 10V)\n? RDS(ON)<14m?(VGS= 4.5V);

AOS

美國萬代

N-Channel Enhancement Mode Field Effect Transistor

AOS

美國萬代