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          首頁 >VB20120S>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          VB20120S

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per ?? JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and in ?? accordance to WEEE 2002/96/EC ? Haloge

          文件:166.29 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20120S

          High-Voltage Trench MOS Barrier Schottky Rectifier

          文件:162.33 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20120S-E3

          High Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

          文件:217.34 Kbytes 頁數(shù):6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20120S-E3

          High Voltage Trench MOS Barrier Schottky Rectifier

          Ultra Low VF = 0.50 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 2

          文件:161.02 Kbytes 頁數(shù):6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20120S-E3

          Schotty Barrier Diode

          FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

          文件:320.6 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          VB20120S-E3/4W

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per ?? JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and in ?? accordance to WEEE 2002/96/EC ? Haloge

          文件:166.29 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20120S-E3/8W

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per ?? JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and in ?? accordance to WEEE 2002/96/EC ? Haloge

          文件:166.29 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20120S-E3SLASH4W

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per ?? JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and in ?? accordance to WEEE 2002/96/EC ? Haloge

          文件:166.29 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20120S-E3SLASH8W

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per ?? JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and in ?? accordance to WEEE 2002/96/EC ? Haloge

          文件:166.29 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20120SG

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

          Ultra Low VF= 0.54 V at IF= 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B

          文件:166.5 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          詳細參數(shù)

          • 型號:

            VB20120S

          • 制造商:

            VISHAY

          • 制造商全稱:

            Vishay Siliconix

          • 功能描述:

            High-Voltage Trench MOS Barrier Schottky Rectifier

          供應商型號品牌批號封裝庫存備注價格
          TOSHIBA/東芝
          23+
          SOP-8
          69820
          終端可以免費供樣,支持BOM配單!
          詢價
          VISHAY
          25+
          TO-263
          3675
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          VIS
          22+
          TO-263AB
          6000
          十年配單,只做原裝
          詢價
          VISHAY/威世
          23+
          TO-263AB
          11200
          原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
          詢價
          VISHAY/威世
          22+
          TO-263AB
          82000
          現(xiàn)貨,原廠原裝假一罰十!
          詢價
          VISHAY/威世
          22+
          TO-263
          100000
          代理渠道/只做原裝/可含稅
          詢價
          24+
          N/A
          52000
          一級代理-主營優(yōu)勢-實惠價格-不悔選擇
          詢價
          Vishay General Semiconductor -
          25+
          TO-263AB(D?PAK)
          9350
          獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
          詢價
          VISHAY
          原廠封裝
          9800
          原裝進口公司現(xiàn)貨假一賠百
          詢價
          VISHAY/威世
          2447
          TO-263
          100500
          一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
          詢價
          更多VB20120S供應商 更新時間2026-1-17 14:08:00
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