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                >VB20120S>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          VB20120SG-E3
          High Voltage Trench MOS Barrier Schottky Rectifier
          
Ultra Low VF= 0.54 V at IF= 5 A
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
? Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B
          文件：161.39 Kbytes 頁數(shù)：6 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB20120SG-E3/4W
          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
          
Ultra Low VF= 0.54 V at IF= 5 A
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
? Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B
          文件：166.5 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB20120SG-E3/8W
          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
          
Ultra Low VF= 0.54 V at IF= 5 A
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
? Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B
          文件：166.5 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB20120SG-E3SLASH4W
          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
          
Ultra Low VF= 0.54 V at IF= 5 A
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
? Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B
          文件：166.5 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB20120SG-E3SLASH8W
          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
          
Ultra Low VF= 0.54 V at IF= 5 A
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
? Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B
          文件：166.5 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB20120SG-M3
          High-Voltage Trench MOS Barrier Schottky Rectifier
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
? Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIO
          文件：101 Kbytes 頁數(shù)：4 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB20120SG-M3_V01
          High-Voltage Trench MOS Barrier Schottky Rectifier
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
? Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIO
          文件：101 Kbytes 頁數(shù)：4 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB20120S-M3
          Schotty Barrier Diode
          
FEATURES
· Low Forward Voltage Drop, Low Power losses
· High Efficiency Operation
· SMD
APPLICATIONS
· Switching Power Supply (SPS)
· High Frequency Converter
· DC/DC Converter
          文件：320.62 Kbytes 頁數(shù)：2 Pages
          ISC
          無錫固電
          

          VB20120S-M3SLASH4W
          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
          
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)

          文件：100.46 Kbytes 頁數(shù)：4 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB20120S-M3SLASH8W
          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
          
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)

          文件：100.46 Kbytes 頁數(shù)：4 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          
            
          
		
        
          
            
          
                
          詳細(xì)參數(shù)
          
            
          
            
            
            	
          • 型號：
            VB20120S
          • 制造商：
            VISHAY 
          • 制造商全稱：
            Vishay Siliconix 
          • 功能描述：
            High-Voltage Trench MOS Barrier Schottky Rectifier 
          
            
          
        
          
            
          供應(yīng)商型號品牌批號封裝庫存備注價格
          
                
          



          TOSHIBA/東芝
          		

          23+
          		

          SOP-8
          		

          69820
          		

          終端可以免費(fèi)供樣,支持BOM配單!
          		
詢價
          

          



          VISHAY
          		

          25+
          		

          TO-263
          		

          3675
          		

          就找我吧!--邀您體驗愉快問購元件!
          		
詢價
          

          



          VIS
          		

          22+
          		

          TO-263AB
          		

          6000
          		

          十年配單,只做原裝
          		
詢價
          

          



          VISHAY/威世
          		

          23+
          		

          TO-263AB
          		

          11200
          		

          原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
          		
詢價
          

          



          VISHAY/威世
          		

          22+
          		

          TO-263AB
          		

          82000
          		

          現(xiàn)貨,原廠原裝假一罰十!
          		
詢價
          

          



          VISHAY/威世
          		

          22+
          		

          TO-263
          		

          100000
          		

          代理渠道/只做原裝/可含稅
          		
詢價
          

          



          		

          24+
          		

          N/A
          		

          52000
          		

          一級代理-主營優(yōu)勢-實惠價格-不悔選擇
          		
詢價
          

          



          Vishay General Semiconductor -
          		

          25+
          		

          TO-263AB(D?PAK)
          		

          9350
          		

          獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
          		
詢價
          

          



          VISHAY
          		

          		

          原廠封裝
          		

          9800
          		

          原裝進(jìn)口公司現(xiàn)貨假一賠百
          		
詢價
          

          



          VISHAY/威世
          		

          2447
          		

          TO-263
          		

          100500
          		

          一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
          		
詢價
          

            
          
        
          
        
          更多VB20120S供應(yīng)商
            更新時間2026-1-17 14:08:00
        
          
        
          
          
          
            
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