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                >VB20150S>規(guī)格書列表
                
          
            
          
                
          
                    
          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          VB20150S
          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
? AEC-Q101 qualified
? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
? Halogen-free a
          文件：167.54 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB20150S-E3
          High Voltage Trench MOS Barrier Schottky Rectifier
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
? Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, 
          文件：217.09 Kbytes 頁數(shù)：6 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB20150S-E3
          Schotty Barrier Diode
          
FEATURES
· Low Forward Voltage Drop, Low Power losses
· High Efficiency Operation
· SMD
APPLICATIONS
· Switching Power Supply (SPS)
· High Frequency Converter
· DC/DC Converter
          文件：321 Kbytes 頁數(shù)：2 Pages
          ISC
          無錫固電
          

          VB20150S-E3/4W
          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
? AEC-Q101 qualified
? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
? Halogen-free a
          文件：167.54 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB20150S-E3/8W
          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
? AEC-Q101 qualified
? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
? Halogen-free a
          文件：167.54 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB20150S-E3SLASH4W
          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
? AEC-Q101 qualified
? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
? Halogen-free a
          文件：167.54 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB20150S-E3SLASH8W
          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
? AEC-Q101 qualified
? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
? Halogen-free a
          文件：167.54 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB20150SG
          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A
          
Ultra Low VF = 0.57 V at IF = 5 A


FEATURES

? Trench MOS Schottky technology

? Low forward voltage drop, low power losses

? High efficiency operation

? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106

? AEC-Q101 qualified

? Compliant to RoHS Directive 2002/95/EC and
          文件：167.43 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB20150SG-E3
          High efficiency operation
          
FEATURES

? Trench MOS Schottky technology

? Low forward voltage drop, low power losses

? High efficiency operation

? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO
          文件：157.86 Kbytes 頁數(shù)：6 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB20150SG-E3
          High Voltage Trench MOS Barrier Schottky Rectifier
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
? Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB, 
          文件：217.05 Kbytes 頁數(shù)：6 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          
            
          
		
        
          
            
          
                
          詳細(xì)參數(shù)
          
            
          
            
            
            	
          • 型號(hào)：
            VB20150S
          • 制造商：
            VISHAY 
          • 制造商全稱：
            Vishay Siliconix 
          • 功能描述：
            High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A 
          
            
          
        
          
            
          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          
                
          



          VISHAY/威世
          		

          23+
          		

          TO-263
          		

          50000
          		

          全新原裝正品現(xiàn)貨,支持訂貨
          		
詢價(jià)
          

          



          VISHAY
          		

          		

          原廠封裝
          		

          9800
          		

          原裝進(jìn)口公司現(xiàn)貨假一賠百
          		
詢價(jià)
          

          



          Vishay
          		

          24+
          		

          NA
          		

          3000
          		

          進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
          		
詢價(jià)
          

          



          VISHAY
          		

          25+
          		

          TO-263
          		

          3675
          		

          就找我吧!--邀您體驗(yàn)愉快問購元件!
          		
詢價(jià)
          

          



          GENERALSEMICONDUCTORVISHAY
          		

          24+
          		

          NA
          		

          30000
          		

          房間原裝現(xiàn)貨特價(jià)熱賣,有單詳談
          		
詢價(jià)
          

          



          GENERALSEMICONDUCTORVISHAY
          		

          21+
          		

          NA
          		

          12820
          		

          只做原裝,質(zhì)量保證
          		
詢價(jià)
          

          



          VIS
          		

          22+
          		

          TO-263AB
          		

          6000
          		

          十年配單,只做原裝
          		
詢價(jià)
          

          



          GENERALSEMICONDUCTORVISHAY
          		

          23+
          		

          NA
          		

          800
          		

          電子元器件供應(yīng)原裝現(xiàn)貨. 優(yōu)質(zhì)獨(dú)立分銷。原廠核心渠道
          		
詢價(jià)
          

          



          GENERALSEMICONDUCTORVISHAY
          		

          23+
          		

          NA
          		

          11200
          		

          原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
          		
詢價(jià)
          

          



          GENERALSEMICONDUCTORVISHAY
          		

          22+
          		

          N/A
          		

          16000
          		

          現(xiàn)貨,原廠原裝假一罰十!
          		
詢價(jià)
          

            
          
        
          
        
          更多VB20150S供應(yīng)商
            更新時(shí)間2026-1-18 11:00:00
        
          
        
          
          
          
            
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