P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The μPA1856 is a switching device which can be driven directly by a 2.5-V power source. The μPA1856 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? Can be dri

文件：77.37 Kbytes 頁數(shù)：8 Pages

NEC

瑞薩

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1856 is a switching device which can be driven directly by a 2.5-V power source. The μPA1856 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? Can be

文件：208.4 Kbytes 頁數(shù)：10 Pages

RENESAS

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Pch Dual Power Mosfet -20V -4.5A 45Mohm Tssop8

The UPA1856GR is a Pch Dual Power Mosfet -20V -4.5A 45Mohm Tssop8.

Renesas

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Ring Tongue Terminal 10-12AWG Copper Yellow 27.69mm Tin

文件：1.15746 Mbytes 頁數(shù)：26 Pages

HOLLINGSWORTH

Intelligent Battery Sensor IC

文件：2.441 Mbytes 頁數(shù)：179 Pages

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