P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The μPA1916 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? 1.8 V driv

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Old Company Name in Catalogs and Other Documents

DESCRIPTION The μPA1916 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? 1.8 V driv

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P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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P-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Available ? TrenchFET? Power MOSFET APPLICATIONS ? Load Switch

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P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The μPA1916 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? 1.8 V driv

文件：62.03 Kbytes 頁(yè)數(shù)：8 Pages

NEC

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Power MOSFETs for Automotive

Support is limited to customers who have already adopted these products.\n\nThe μPA1916 is a switching device which can be driven directly by a 1. 8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power ? 1.8 V drive available\n? Low on-state resistance RDS(on)1 = 39 m? MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)2 = 49 m? MAX. (VGS = –3.0 V, ID = –2.5 A) RDS(on)3 = 55 m? MAX. (VGS = –2.5 V, ID = –2.5 A) RDS(on)4 = 98 m? MAX. (VGS = –1.8 V, ID = –1.5 A);

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