P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The μPA1918 is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? 4.0 V driv

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NEC

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Old Company Name in Catalogs and Other Documents

DESCRIPTION The μPA1918 is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? 4.0 V dri

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N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION\nThe μPA1918 is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.FEATURES\n? 4.0 V drive av ? 4.0 V drive available\n? Low on-state resistance\n? RDS(on)1= 143 m?MAX. (VGS= –10 V, ID= –2.0 A)\n? RDS(on)2 = 179 m?MAX. (VGS= –4.5 V, ID= –2.0 A)\n? RDS(on)3= 190 m?MAX. (VGS= –4.0 V, ID= –2.0 A);

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P-Channel 60-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Available ? TrenchFET? Power MOSFET APPLICATIONS ? Load Switch

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VBSEMI

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P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The μPA1918 is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? 4.0 V driv

文件：71.41 Kbytes 頁(yè)數(shù)：8 Pages

NEC

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Power MOSFETs for Automotive

Support is limited to customers who have already adopted these products.\n\nThe μPA1918 is a switching device, which can be driven directly by a 4. 0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power ? 4.0 V drive available\n? Low on-state resistance RDS(on)1 = 143 m? MAX. (VGS = –10 V, ID = –2.0 A) RDS(on)2 = 179 m? MAX. (VGS = –4.5 V, ID = –2.0 A) RDS(on)3 = 190 m? MAX. (VGS = –4.0 V, ID = –2.0 A);

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