P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The μPA1910 is a switching device which can be driven directly by a 2.5-V power source. The μPA1910 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? Can be dri

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NEC

瑞薩

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1910 is a switching device which can be driven directly by a 2.5-V power source. The μPA1910 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? Can be

文件：230.05 Kbytes 頁(yè)數(shù)：10 Pages

RENESAS

瑞薩

P-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Available ? TrenchFET? Power MOSFET APPLICATIONS ? Load Switch

文件：445.15 Kbytes 頁(yè)數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

Low voltage, Low power, ?1 High detect accuracy CMOS Voltage Detector

GENERAL DESCRIPTIONS The VDA series are voltage detectors with low voltage, low power consumption and high accuracy. The accuracy of the detection voltage is detected based on a voltage reference of high accuracy that the temperature coefficient is controlled. The detection voltage is made in

文件：1.30402 Mbytes 頁(yè)數(shù)：18 Pages

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

Low voltage, Low power, ?1 High detect accuracy CMOS Voltage Detector

GENERAL DESCRIPTIONS The VDA series are voltage detectors with low voltage, low power consumption and high accuracy. The accuracy of the detection voltage is detected based on a voltage reference of high accuracy that the temperature coefficient is controlled. The detection voltage is made in

文件：1.30402 Mbytes 頁(yè)數(shù)：18 Pages

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

High Pass Filters 850 to 7000 MHz

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MINI