N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The μPA1901 is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? 2.5 V dri

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NEC

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA1901 is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? 2.5 V

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RENESAS

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N-Channel 30 V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? Low On-Resistance ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? DC/DC Converters, High Speed Switching

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VBSEMI

微碧半導(dǎo)體

Nch Single Power Mosfet 30V 6.5A 39Mohm 6Pin Tmm/Sc-95

The UPA1901TE is a Nch Single Power Mosfet 30V 6.5A 39Mohm 6Pin Tmm/Sc-95. ? 2.5 V drive available\n? Low on-state resistance RDS(on)1 = 39 m? MAX. (VGS = 4.5 V, ID = 3.5 A) RDS(on)2 = 40 m? MAX. (VGS = 4.0 V, ID = 3.5 A) RDS(on)3 = 54 m? MAX. (VGS = 2.5 V, ID = 3.5 A)\n文檔文檔標(biāo)題類型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語應(yīng)用文檔 2021年4月16日UPA1901 Data Sheet (G158;

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