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          首頁 >STP2>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          STP20NE06FP

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 13A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 0.08Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:318.83 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          STP20NE06FP

          N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET

          DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ” Single Feature Size? ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a rem

          文件:104.96 Kbytes 頁數(shù):9 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          STP20NE06L

          N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET

          DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ” Single Feature Size? ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a rem

          文件:104.15 Kbytes 頁數(shù):9 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          STP20NE06L

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 0.08Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:371.73 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          STP20NE06LFP

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 13A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 0.08Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:318.68 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          STP20NE06LFP

          N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET

          DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ” Single Feature Size? ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a rem

          文件:104.15 Kbytes 頁數(shù):9 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          STP20NE10

          N - CHANNEL 100V - 0.07ohm - 20A - TO-220 STripFET MOSFET

          DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size?” strip-based process.The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable m

          文件:81.31 Kbytes 頁數(shù):8 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          STP20NE10

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 0.1Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:371.7 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          STP20NF06

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 0.07Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:371.52 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          STP20NF06

          N-CHANNEL 60V - 0.06ohm - 20A TO-220/TO-220FP STripFET II POWER MOSFET

          Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size?” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

          文件:275.05 Kbytes 頁數(shù):10 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          詳細(xì)參數(shù)

          • 型號:

            STP2

          • 功能描述:

            MOSFET P-Ch 20 Volt 2.2 Amp

          • RoHS:

          • 制造商:

            STMicroelectronics

          • 晶體管極性:

            N-Channel

          • 汲極/源極擊穿電壓:

            650 V

          • 閘/源擊穿電壓:

            25 V

          • 漏極連續(xù)電流:

            130 A 電阻汲極/源極

          • RDS(導(dǎo)通):

            0.014 Ohms

          • 配置:

            Single

          • 安裝風(fēng)格:

            Through Hole

          • 封裝/箱體:

            Max247

          • 封裝:

            Tube

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          25+
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          ST/意法全新特價(jià)STT3PF20V即刻詢購立享優(yōu)惠#長期有貨
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          14458
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          更多STP2供應(yīng)商 更新時(shí)間2026-1-19 17:05:00
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