| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT General Features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ OFF LOSSES INCLUDE TAIL CURRENT ■ LOSSES INCLUDE DIODE RECOVERY ENERGY ■ LOWER CRES/CIES RATIO ■ HIGH FREQUENCY OPERATION UP TO 70 KHz ■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE ■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER 文件：430.39 Kbytes 頁(yè)數(shù)：15 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH? technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o 文件：1.36326 Mbytes 頁(yè)數(shù)：22 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH? technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o 文件：1.36326 Mbytes 頁(yè)數(shù)：22 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/gb7nc60hd/marking.html">GB7NC60HD；Package：I2PAK_TO-262；N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH? technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o 文件：1.36326 Mbytes 頁(yè)數(shù)：22 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/gb7nc60hd/marking.html">GB7NC60HD；Package：D2PAK_TO-263；N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH? technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o 文件：1.36326 Mbytes 頁(yè)數(shù)：22 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/gb7nc60hd/marking.html">GB7NC60HD；Package：D2PAK；N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT General Features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ OFF LOSSES INCLUDE TAIL CURRENT ■ LOSSES INCLUDE DIODE RECOVERY ENERGY ■ LOWER CRES/CIES RATIO ■ HIGH FREQUENCY OPERATION UP TO 70 KHz ■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE ■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER 文件：430.39 Kbytes 頁(yè)數(shù)：15 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/gd10nc60hd/marking.html">GD10NC60HD；Package：DPAK；600 V - 10 A - very fast IGBT Description This IGBT utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recov 文件：771.12 Kbytes 頁(yè)數(shù)：19 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲印：GD10NC60KD；Package：DPAK；10 A, 600 V short-circuit rugged IGBT Description These devices are very fast IGBTs developed using advanced PowerMESH? technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ? Lowe 文件：1.6576 Mbytes 頁(yè)數(shù)：30 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
EAS 180 mJ - 400 V - internally clamped IGBT Description This application-specific IGBT utilizes the most advanced PowerMESH? technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automot 文件：632.91 Kbytes 頁(yè)數(shù)：18 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
EAS 180 mJ - 400 V - internally clamped IGBT Description This application-specific IGBT utilizes the most advanced PowerMESH? technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automot 文件：632.91 Kbytes 頁(yè)數(shù)：18 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
詳細(xì)參數(shù)
- 型號(hào)：
STG
- 制造商：
SAMHOP
- 制造商全稱(chēng)：
SAMHOP
- 功能描述：
Dual N-Channel E nhancement Mode F ield E ffect Transistor
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
SAMHOP |
2024+ |
TSSOP8 |
50000 |
原裝現(xiàn)貨 |
詢(xún)價(jià) | ||
STG |
25+ |
MSOP8 |
5000 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢(xún)價(jià) | ||
SAMHOP |
17+ |
MSOP-8 |
6200 |
100%原裝正品現(xiàn)貨 |
詢(xún)價(jià) | ||
SAMHOP |
23+ |
TSSOP8 |
5000 |
原裝正品,假一罰十 |
詢(xún)價(jià) | ||
SAMHOP |
2016+ |
TSSOP8 |
670 |
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票! |
詢(xún)價(jià) | ||
SAMHOP |
23+ |
TSSOP8 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)! |
詢(xún)價(jià) | ||
SAMHOP |
19+ |
TSSOP8 |
8650 |
原裝正品,現(xiàn)貨熱賣(mài) |
詢(xún)價(jià) | ||
SAMHOP |
20+ |
TSSOP8 |
2960 |
誠(chéng)信交易大量庫(kù)存現(xiàn)貨 |
詢(xún)價(jià) | ||
SAMHOP |
25+ |
TSSOP8 |
15000 |
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì) |
詢(xún)價(jià) | ||
SAMHOP |
25+ |
TSSOP8 |
100 |
普通 |
詢(xún)價(jià) |
相關(guān)規(guī)格書(shū)
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- STGB6NC60HDT4
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相關(guān)庫(kù)存
更多- STG8210
- STG8810
- STGB10NB37LZ
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- STGB10NC60HDT4
- STGB10NC60K_07
- STGB10NC60KD_09
- STGB10NC60KT4
- STGB12NB60KDT4
- STGB14NC60K_06
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- STGB3NB60KDT4
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- STGB6NC60HT4
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- STGB7NB60FDT4
- STGB7NB60HDT4
- STGB7NB60KDT4
