isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.05Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.73 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel 800 V, 0.95 廓, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh??Power MOSFET

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore su

文件：977.31 Kbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N溝道800 V、0.95 Ohm、6.5 A MDmesh(TM) 功率MOSFET，TO-220FP封裝

This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. Using S ? 100% avalanche tested \n? Low input capacitance and gate charge \n? Low gate input resistance;

ST

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.05Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.26 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel 800 V, 0.95 廓, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh??Power MOSFET

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore su

文件：977.31 Kbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體