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    首頁(yè) >STF7N80K5>規(guī)格書列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    STF7N80K5

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 6.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) -RDS(on) = 1.2Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

    文件:319.31 Kbytes 頁(yè)數(shù):2 Pages

    ISC

    無(wú)錫固電

    STF7N80K5

    Ultra low gate charge

    Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

    文件:689.13 Kbytes 頁(yè)數(shù):14 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    STF7N80K5

    N溝道800 V、0.95 Ohm典型值、6 A MDmesh K5功率MOSFET,TO-220FP封裝

    These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. ? Industry’s lowest RDS(on) x area \n? Industry’s best FoM (figure of merit) \n? Ultra-low gate charge \n? 100% avalanche tested \n? Zener-protected;

    ST

    意法半導(dǎo)體

    STFI7N80K5

    Ultra low gate charge

    Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

    文件:689.13 Kbytes 頁(yè)數(shù):14 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    STL7N80K5

    Ultra low gate charge

    Description This very high voltage N-channel Power MOSFET is designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficie

    文件:956.08 Kbytes 頁(yè)數(shù):17 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    STP7N80K5

    Zener-protected

    Description These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH? 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for app

    文件:1.00919 Mbytes 頁(yè)數(shù):21 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    技術(shù)參數(shù)

    • Package:

      TO-220FP

    • Grade:

      Industrial

    • VDSS(V):

      800

    • RDS(on)_max(@ VGS=10V)(Ω):

      1.2

    • Drain Current (Dc)_max(A):

      6

    • PTOT_max(W):

      25

    • Qg_typ(nC):

      13.4

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
    ST/意法半導(dǎo)體
    22+
    TO-220-3
    6003
    原裝正品現(xiàn)貨 可開(kāi)增值稅發(fā)票
    詢價(jià)
    ST
    24+
    TO220F
    12000
    進(jìn)口原裝 價(jià)格優(yōu)勢(shì)
    詢價(jià)
    ST/意法
    2450+
    TO-220F
    9850
    只做原裝正品現(xiàn)貨或訂貨假一賠十!
    詢價(jià)
    ST(意法)
    25+
    TO-220FP
    21000
    原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號(hào)開(kāi)票。
    詢價(jià)
    ST(意法)
    25+
    TO-220FP
    21000
    原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號(hào)開(kāi)票。
    詢價(jià)
    STMicroelectronics
    24+
    NA
    3000
    進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
    詢價(jià)
    ST專家
    25+23+
    TO-220-3
    29628
    絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
    詢價(jià)
    ST
    20+
    TO-220-3
    69052
    原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
    詢價(jià)
    ST
    2022+
    35
    全新原裝 貨期兩周
    詢價(jià)
    ST/意法
    25+
    TO-220F
    30000
    全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
    詢價(jià)
    更多STF7N80K5供應(yīng)商 更新時(shí)間2026-1-22 8:31:00

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