絲?。?a target="_blank" title="Marking" href="/22nm60nd/marking.html">22NM60ND；Package：TO-220FP；Automotive-grade N-channel 600 V, 0.17 ??typ., 17 A FDmesh??II Power MOSFET in a TO-220FP package

Description This FDmesh? II Power MOSFET with fastrecovery body diode is produced using MDmesh? II technology. Utilizing a new striplayout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converter

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STMICROELECTRONICS

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Automotive-grade N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh II Power MOSFET in a TO-220FP package

This FDmesh? II Power MOSFET with fast-recovery body diode is produced using MDmesh? II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.\n Designed for automotive applications and AEC-Q101 qualified\nFast-recovery body diode\nLow gate charge and input capacitance\nLow on-resistance\n100% avalanche tested\nHigh dv/dt ruggedness\n;

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 22A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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N-channel 600 V, 0.2 廓, 16 A MDmesh??II Power MOSFET

Description These devices are made using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding

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Isc N-Channel MOSFET Transistor

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