isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 165mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

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絲印：26N60M2；Package：TO-220FP；N-channel 600 V, 0.14 廓 typ., 20 A MDmesh??M2 Power MOSFETs in TO-220FP and I?PAKFP packages

文件：434.84 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

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N溝道600 V、0.14 Ohm典型值、20 A MDmesh M2功率MOSFET，TO-220FP封裝

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. ? Extremely low gate charge \n? Excellent output capacitance (Coss) profile \n? 100% avalanche tested \n? Zener-protected;

ST

意法半導(dǎo)體

N-channel 600 V, 0.14 廓 typ., 20 A MDmesh??M2 Power MOSFETs in TO-220FP and I?PAKFP packages

文件：434.84 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

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N-channel 600 V, 0.14 Ω typ., 20 A MDmeshTM M2 Power MOSFET in TO-220FP ultra narrow leads package

Features ? Extremely low gate charge ? Excellent output capacitance (COSS) profile ? 100 avalanche tested ? Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh? M2 technology. Thanks to its strip layout and an improved vertical structure, the devi

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STMICROELECTRONICS

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N-channel 600 V, 0.14 Ω typ., 20 A MDmeshTM M2 Power MOSFETs in TO-220 and TO-247 packages

Features ? Extremely low gate charge ? Excellent output capacitance (COSS) profile ? 100 avalanche tested ? Zener-protected Description These devices are N-channel Power MOSFETs developed using MDmesh? M2 technology. Thanks to their strip layout and improved vertical structure, these de

文件：804.83 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體