N-channel 650 V, 0.75 廓 typ., 10 A SuperMESH3??Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages

Description These SuperMESH3? Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH? technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi

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STMICROELECTRONICS

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N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3 Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages

Description These SuperMESH3? Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH? technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi

文件：958.74 Kbytes 頁(yè)數(shù)：17 Pages

STMICROELECTRONICS

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N-Channel 650V (D-S)Power MOSFET

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VBSEMI

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N溝道650 V、0.75 Ohm典型值、10 A有齊納管保護(hù)的SuperMESH3(TM) 功率MOSFET，TO-220FP封裝

These SuperMESH3? Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH? technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitab ? 100% avalanche tested \n? Extremely low on-resistance RDS(on) \n? Gate charge minimized \n? Very low intrinsic capacitances \n? Improved diode reverse recovery characteristics \n? Zener-protected;

ST

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