絲?。?a target="_blank" title="Marking" href="/80n240k6/marking.html">80N240K6；Package：DPAK；N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a DPAK package

Features ? Worldwide best RDS(on) x area ? Worldwide best FOM (figure of merit) ? Ultra low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Flyback converter ? Adapters for tablets, notebook and AIO ? LED lighting

文件：355.45 Kbytes 頁數(shù)：16 Pages

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N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a DPAK package

這種超高電壓N溝道功率MOSFET基于意法半導(dǎo)體20年的超結(jié)技術(shù)經(jīng)驗，采用終極MDmesh K6技術(shù)設(shè)計而成。其結(jié)果為最佳單位面積導(dǎo)通電阻和柵極電荷，適用于需要出色的功率密度和高效率的應(yīng)用。\n\n ? 全球最佳RDS(on) x 面積 \n? 極低的柵極電荷 \n? 穩(wěn)壓保護(hù);

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意法半導(dǎo)體

N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220FP package

Features ? Worldwide best RDS(on) x area ? Worldwide best FOM (figure of merit) ? Ultra low gate charge ? 100% avalanche tested ? Zener-protected Applications ? Flyback converter ? Adapters for tablets, notebook and AIO ? LED lighting Description This very high voltage N-channel

文件：245.65 Kbytes 頁數(shù)：13 Pages

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意法半導(dǎo)體

N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package

Features ? Worldwide best RDS(on) x area ? Worldwide best FOM (figure of merit) ? Ultra low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Flyback converter ? Adapters for tablets, notebook and AIO ? LED lighting

文件：255.79 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 800 V, 197 m廓 typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package

文件：259.079 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體