Ultra low on-resistance

Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET? technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. ? Extremely low gate charge ? Ultra low on-resistance ? Low gate input resistance A

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STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/80n240k6/marking.html">80N240K6；Package：DPAK；N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a DPAK package

Features ? Worldwide best RDS(on) x area ? Worldwide best FOM (figure of merit) ? Ultra low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Flyback converter ? Adapters for tablets, notebook and AIO ? LED lighting

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STMICROELECTRONICS

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絲印：80N340K6；Package：DPAK；N-channel 800 V, 285 mΩ typ., 12 A MDmesh K6 Power MOSFET in a DPAK package

Features ? Worldwide best RDS(on) x area ? Worldwide best FOM (figure of merit) ? Ultra low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Flyback converter ? Adapters for tablets, notebook and AIO ? LED lighting Description This very high voltage N-channel Powe

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STMICROELECTRONICS

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絲印：80N3LL；Package：DPAK；N-channel 30 V, 4 mΩ typ., 80 A Power MOSFET in a DPAK package

Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness ? Low gate drive power loss Applications ? Switching applications Description This device is an N-channel Power MOSFET with very low RDS(on) in all packages.

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STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/80n450k6/marking.html">80N450K6；Package：DPAK；N-channel 800 V, 380 mΩ typ., 10 A MDmesh K6 Power MOSFET in a DPAK package

Features ? Worldwide best RDS(on) x area ? Worldwide best FOM (figure of merit) ? Ultra low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Flyback converter ? Adapters for tablets, notebook and AIO ? LED lighting Description This very high voltage N-channel Power MO

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STMICROELECTRONICS

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N-Channel Enhancement Mode MOSFET

Application ? Adaptor ? Charger ? Power management o SMPS Standby Power

文件：2.03279 Mbytes 頁(yè)數(shù)：4 Pages

TECHPUBLIC

臺(tái)舟電子

SCHOTTKY RECTIFIER

? 150 'C TJ operation ? Center tap configuration ? Ultralow forward voltage drop ? High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? High frequency operation ? Guard ring for enhanced ruggedness and long term reliability ? Trench MO

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SMCDIODE

桑德斯微電子

SCHOTTKY RECTIFIER

Features ? 150 'C TJ operation ? Center tap configuration ? Ultralow forward voltage drop ? High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? High frequency operation ? Guard ring for enhanced ruggedness and long term reliability ?

文件：380.56 Kbytes 頁(yè)數(shù)：6 Pages

SMCDIODE

桑德斯微電子

SCHOTTKY RECTIFIER

Features ? 150'C TJ operation ? Center tap configuration ? Ultralow forward voltage drop ? High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? High frequency operation ? Guard ring for enhanced ruggedness and long term reliability ?

文件：380.43 Kbytes 頁(yè)數(shù)：6 Pages

SMCDIODE

桑德斯微電子

Complementary transistor pair in a single package

Description The STD815CP40 is a hybrid complementary pair of power bipolar transistors manufactured by using the high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. The STD815CP40 is housed in dual island DIP-8 package with separated terminals

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STMICROELECTRONICS

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