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          首頁 >STD8>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          STD882D

          NPN Silicon Transistor

          Description ? Suitable for low voltage large current drivers ? Excellent hFE Linearity ? Complementary pair with STB772D ? Switching Application Features ? Low collector saturation voltage VCE(sat)=0.4V(Max.)

          文件:100.77 Kbytes 頁數(shù):3 Pages

          AUK

          STD882D

          NPN Silicon Transistor

          Description ? Suitable for low voltage large current drivers ? Excellent hFE Linearity ? Complementary pair with STB772D ? Switching Application Features ? Low collector saturation voltage VCE(sat)=0.4V(Max.)

          文件:296.13 Kbytes 頁數(shù):4 Pages

          KODENSHI

          可天士

          STD888

          HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

          DESCRIPTION The device is manufactured in low voltage PNP Planar Technology by using a Base Island layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. ■ VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE ■ DC CURRENT GAIN, hFE > 100

          文件:127.73 Kbytes 頁數(shù):6 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          STD888

          isc Silicon PNP Power Transistor

          DESCRIPTION ? Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.7V(Max)( IC= -5A; IB= -0.25A) ? DC Current Gain -hFE = 150(Min)@ IC= -0.5A ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? Power amplifier applications ? Voltage regulat

          文件:227.61 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          STD888

          HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

          DESCRIPTION The UTC STD888 is a high current, high performance, low voltage PNP transistor; it uses UTC’s advanced technology to provide customers high DC current gain and very low saturation voltage. The UTC STD888 is suitable for switching regulator in battery charger applications, heavy load

          文件:132.29 Kbytes 頁數(shù):3 Pages

          UTC

          友順

          STD888G-TN3-R

          HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

          DESCRIPTION The UTC STD888 is a high current, high performance, low voltage PNP transistor; it uses UTC’s advanced technology to provide customers high DC current gain and very low saturation voltage. The UTC STD888 is suitable for switching regulator in battery charger applications, heavy load

          文件:132.29 Kbytes 頁數(shù):3 Pages

          UTC

          友順

          STD888G-TN3-T

          HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

          DESCRIPTION The UTC STD888 is a high current, high performance, low voltage PNP transistor; it uses UTC’s advanced technology to provide customers high DC current gain and very low saturation voltage. The UTC STD888 is suitable for switching regulator in battery charger applications, heavy load

          文件:132.29 Kbytes 頁數(shù):3 Pages

          UTC

          友順

          STD888L-TN3-R

          HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

          DESCRIPTION The UTC STD888 is a high current, high performance, low voltage PNP transistor; it uses UTC’s advanced technology to provide customers high DC current gain and very low saturation voltage. The UTC STD888 is suitable for switching regulator in battery charger applications, heavy load

          文件:132.29 Kbytes 頁數(shù):3 Pages

          UTC

          友順

          STD888L-TN3-T

          HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

          DESCRIPTION The UTC STD888 is a high current, high performance, low voltage PNP transistor; it uses UTC’s advanced technology to provide customers high DC current gain and very low saturation voltage. The UTC STD888 is suitable for switching regulator in battery charger applications, heavy load

          文件:132.29 Kbytes 頁數(shù):3 Pages

          UTC

          友順

          STD888T4

          Medium Current, High Performance, Low Voltage PNP Transistor

          DESCRIPTION The device is manufactured in low voltage PNP Planar Technology by using a Base Island layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. ■ VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE ■ DC CURRENT GAIN, hFE > 100

          文件:192.11 Kbytes 頁數(shù):10 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          技術(shù)參數(shù)

          • Package:

            DPAK

          • Grade:

            Industrial

          • Transistor Polarity:

            PNP

          • Collector-Emitter Voltage_max(V):

            30

          • Collector-Base Voltage_max(V):

            60

          • Collector Current_abs_max(A):

            5

          • Dc Current Gain_min:

            75

          • Test Condition for hFE (IC):

            5

          • Test Condition for hFE (VCE)_spec(V):

            1

          • VCE(sat)_max(V):

            0.25

          • Test Condition for VCE(sat) - IC:

            2

          • Test Condition for VCE(sat) - IB_spec(mA):

            50

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          更多STD8供應(yīng)商 更新時(shí)間2026-1-21 15:30:00
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