| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
20 V, single P-channel Trench MOSFET General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ? Trench MOSFET technology ? Small and leadless ultra thin SMD plasti 文件：251.52 Kbytes 頁(yè)數(shù)：14 Pages | 恩XP | 恩XP | ||
絲印：1S；Package：SOT1220；20 V, single P-channel Trench MOSFET 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits ? Trench MOSFET technology ? Small and leadless ultra thin 文件：746.25 Kbytes 頁(yè)數(shù)：14 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/1e/marking.html">1E；Package：SOT1220；60 V N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Trench MOSFET technology ? Small and leadless ultra thin SM 文件：394.08 Kbytes 頁(yè)數(shù)：16 Pages | NEXPERIA 安世 | NEXPERIA | ||
60 V N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ? Trench MOSFET technology ? Small and leadless ultra thin SMD plasti 文件：273.73 Kbytes 頁(yè)數(shù)：15 Pages | 恩XP | 恩XP | ||
絲?。?a target="_blank" title="Marking" href="/4m/marking.html">4M；Package：SOT1220；20 V, P-channel Trench MOSFET 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Low threshold voltage ? Trench MOSFET technology ? Side we 文件：285.15 Kbytes 頁(yè)數(shù)：14 Pages | NEXPERIA 安世 | NEXPERIA | ||
20 V, P-channel Trench MOSFET 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Low threshold voltage ? Trench MOSFET technology ? Side we 文件：285.15 Kbytes 頁(yè)數(shù)：14 Pages | NEXPERIA 安世 | NEXPERIA | ||
30 V, single P-channel Trench MOSFET General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ? Trench MOSFET technology ? Small and leadless ultra thin SMD plasti 文件：242.75 Kbytes 頁(yè)數(shù)：14 Pages | 恩XP | 恩XP | ||
絲?。?a target="_blank" title="Marking" href="/1u/marking.html">1U；Package：SOT1220；30 V, single P-channel Trench MOSFET 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits ? Trench MOSFET technology ? Small and leadless ultra thin 文件：740.89 Kbytes 頁(yè)數(shù)：14 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/4q/marking.html">4Q；Package：SOT1220；30 V, P-channel Trench MOSFET 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Trench MOSFET technology ? Side wettable flanks for optical 文件：285.42 Kbytes 頁(yè)數(shù)：14 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/3u/marking.html">3U；Package：SOT1220；30 V, N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Extended temperature range Tj = 175 °C ? Small and leadless 文件：314.67 Kbytes 頁(yè)數(shù)：14 Pages | NEXPERIA 安世 | NEXPERIA |
技術(shù)參數(shù)
- 組態(tài)：
Single
- MOS類型：
N
- VDS(V)：
1000
- VGS(V)：
±30
- Vth(V)：
2/-/4
- RDS(ON)(mΩ)max.at VGS=10V：
4200/5500
- Ciss(pF)：
955
- Coss(pF)：
80
- Crss(pF)：
13
- Qg(nC)_10V：
25
- Qgs(nC)：
4.8
- Qgd(nC)：
10.2
- EAS (mJ)：
17.8
- ID(A)_Tc=25℃：
4
- ID(A)_Tc=100℃：
2.22
- PD(W)_Tc=25℃：
123
- ESD Diode：
X
- Schokkty Diode：
X
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
24+ |
3000 |
公司存貨 |
詢價(jià) | ||||
Ericsson |
13+ |
ROHS |
1263 |
原裝分銷 |
詢價(jià) | ||
MEXICO |
23+ |
QFP/80 |
7000 |
絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)! |
詢價(jià) | ||
恩XP |
2016+ |
SOT363 |
6000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
恩XP |
25+ |
SOT363 |
129000 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
恩XP |
17+ |
6DFN |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
恩XP |
24+ |
QFN |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
MERRIMAC |
22+ |
DIP |
8200 |
全新進(jìn)口原裝現(xiàn)貨 |
詢價(jià) | ||
AmericanPowerConversion( |
新 |
5 |
全新原裝 貨期兩周 |
詢價(jià) | |||
ERICSSON |
24+ |
SMD |
5500 |
長(zhǎng)期供應(yīng)原裝現(xiàn)貨實(shí)單可談 |
詢價(jià) |
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