| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
12 V, P-channel Trench MOSFET 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Low threshold voltage ? Trench MOSFET technology ? Side we 文件：302.91 Kbytes 頁數(shù)：14 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/5k/marking.html">5K；Package：SOT1220；30 V, P-channel Trench MOSFET 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Trench MOSFET technology ? Side w 文件：313.6 Kbytes 頁數(shù)：14 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/zp/marking.html">ZP；Package：SOT1220-2；30 V, N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Low threshold voltage ? Very fast switching ? Trench MOSF 文件：318.54 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/ze/marking.html">ZE；Package：SOT1220-2；30 V, P-channel Trench MOSFET 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Trench MOSFET technology ? Small 文件：305.5 Kbytes 頁數(shù)：14 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/zr/marking.html">ZR；Package：SOT1220-2；20 V, P-channel Trench MOSFET 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Low threshold voltage ? Trench MOSFET technology ? Small 文件：300.38 Kbytes 頁數(shù)：14 Pages | NEXPERIA 安世 | NEXPERIA | ||
30 V N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ? Trench MOSFET technology ? Very fast switching ? Small and leadles 文件：1.13705 Mbytes 頁數(shù)：15 Pages | 恩XP | 恩XP | ||
絲?。?a target="_blank" title="Marking" href="/1b/marking.html">1B；Package：SOT1220；30 V, N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Trench MOSFET technology ? Very fast switching ? Small and 文件：349.75 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
20 V, P-channel Trench MOSFET 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Low threshold voltage ? Trench MOSFET technology ? Side 文件：300.5 Kbytes 頁數(shù)：14 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/4k/marking.html">4K；Package：SOT1220；20 V, P-channel Trench MOSFET 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Low threshold voltage ? Trench MOSFET technology ? Side we 文件：300.17 Kbytes 頁數(shù)：14 Pages | NEXPERIA 安世 | NEXPERIA | ||
20 V, P-channel Trench MOSFET 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Low threshold voltage ? Trench MOSFET technology ? Side 文件：300.5 Kbytes 頁數(shù)：14 Pages | NEXPERIA 安世 | NEXPERIA |
技術參數(shù)
- 組態(tài)：
Single
- MOS類型：
N
- VDS(V)：
1000
- VGS(V)：
±30
- Vth(V)：
2/-/4
- RDS(ON)(mΩ)max.at VGS=10V：
4200/5500
- Ciss(pF)：
955
- Coss(pF)：
80
- Crss(pF)：
13
- Qg(nC)_10V：
25
- Qgs(nC)：
4.8
- Qgd(nC)：
10.2
- EAS (mJ)：
17.8
- ID(A)_Tc=25℃：
4
- ID(A)_Tc=100℃：
2.22
- PD(W)_Tc=25℃：
123
- ESD Diode：
X
- Schokkty Diode：
X
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
3000 |
公司存貨 |
詢價 | ||||
Ericsson |
13+ |
ROHS |
1263 |
原裝分銷 |
詢價 | ||
MEXICO |
23+ |
QFP/80 |
7000 |
絕對全新原裝!100%保質量特價!請放心訂購! |
詢價 | ||
恩XP |
2016+ |
SOT363 |
6000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
恩XP |
25+ |
SOT363 |
129000 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
恩XP |
17+ |
6DFN |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
恩XP |
24+ |
QFN |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
MERRIMAC |
22+ |
DIP |
8200 |
全新進口原裝現(xiàn)貨 |
詢價 | ||
AmericanPowerConversion( |
新 |
5 |
全新原裝 貨期兩周 |
詢價 | |||
ERICSSON |
24+ |
SMD |
5500 |
長期供應原裝現(xiàn)貨實單可談 |
詢價 |
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