| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/zh/marking.html">ZH；Package：SOT1220-2；30 V, N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Low threshold voltage ? Very fast switching ? Trench MOSF 文件：328.05 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/zb/marking.html">ZB；Package：SOT1220-2；30 V, N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench Sup 文件：325.3 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/zv/marking.html">ZV；Package：SOT1220-2；30 V, N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Low threshold voltage ? Trench MOSFET technology ? Small 文件：307.36 Kbytes 頁數(shù)：14 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲印：ZL；Package：SOT1220-2；20 V, P-channel Trench MOSFET 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Low threshold voltage ? Trench MOSFET technology ? Small 文件：304.89 Kbytes 頁數(shù)：14 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/zj/marking.html">ZJ；Package：SOT1220-2；12 V, P-channel Trench MOSFET 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Low threshold voltage ? Trench MOSFET technology ? Small 文件：322.88 Kbytes 頁數(shù)：14 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/3t/marking.html">3T；Package：SOT1220；30 V, N-channel MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Extended temperature range Tj = 175 °C ? Small and leadless 文件：321.51 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/5e/marking.html">5E；Package：SOT1220；30 V, N-channel MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench Supe 文件：346.04 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/zx/marking.html">ZX；Package：SOT1220-2；30 V, N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Low threshold voltage ? Trench MOSFET technology ? Small 文件：308.29 Kbytes 頁數(shù)：14 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲印：6G；Package：SOT1220；12 V, P-channel Trench MOSFET 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Low threshold voltage ? Trench MOSFET technology ? Side we 文件：321.3 Kbytes 頁數(shù)：14 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲印：5C；Package：SOT1220；30 V, N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Very fast switching ? Low threshold voltage ? Trench MOSFE 文件：311.15 Kbytes 頁數(shù)：14 Pages | NEXPERIA 安世 | NEXPERIA |
技術(shù)參數(shù)
- 組態(tài)：
Single
- MOS類型：
N
- VDS(V)：
1000
- VGS(V)：
±30
- Vth(V)：
2/-/4
- RDS(ON)(mΩ)max.at VGS=10V：
4200/5500
- Ciss(pF)：
955
- Coss(pF)：
80
- Crss(pF)：
13
- Qg(nC)_10V：
25
- Qgs(nC)：
4.8
- Qgd(nC)：
10.2
- EAS (mJ)：
17.8
- ID(A)_Tc=25℃：
4
- ID(A)_Tc=100℃：
2.22
- PD(W)_Tc=25℃：
123
- ESD Diode：
X
- Schokkty Diode：
X
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
3000 |
公司存貨 |
詢價 | ||||
Ericsson |
13+ |
ROHS |
1263 |
原裝分銷 |
詢價 | ||
MEXICO |
23+ |
QFP/80 |
7000 |
絕對全新原裝!100%保質(zhì)量特價!請放心訂購! |
詢價 | ||
恩XP |
2016+ |
SOT363 |
6000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
恩XP |
25+ |
SOT363 |
129000 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
恩XP |
17+ |
6DFN |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
恩XP |
24+ |
QFN |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
MERRIMAC |
22+ |
DIP |
8200 |
全新進口原裝現(xiàn)貨 |
詢價 | ||
ERICSSON |
24+ |
SMD |
5500 |
長期供應原裝現(xiàn)貨實單可談 |
詢價 | ||
恩XP |
23+ |
SOT666 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 |
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