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                >PMP>規(guī)格書列表
                
    
            
    
                
    
                    
    型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    PMPB13UP
    絲?。?a target="_blank" title="Marking" href="/5j/marking.html">5J；Package：SOT1220；12 V, P-channel Trench MOSFET
    
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
? Low threshold voltage
? Trench MOSFET technology
? Side we
    文件：330.56 Kbytes 頁數(shù)：14 Pages
    NEXPERIA
    安世
    

    PMPB13XNEA
    絲?。?a target="_blank" title="Marking" href="/4g/marking.html">4G；Package：SOT1220；30 V, N-channel Trench MOSFET
    
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
? Low threshold voltage
? Trench MOSFET technology
? Side we
    文件：299.72 Kbytes 頁數(shù)：14 Pages
    NEXPERIA
    安世
    

    PMPB14R0EP
    絲印：ZG；Package：SOT1220-2；30 V, P-channel Trench MOSFET
    
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
? Logic-level compatible
? Trench MOSFET technology
? Small
    文件：314.59 Kbytes 頁數(shù)：15 Pages
    NEXPERIA
    安世
    

    PMPB14R7EP
    絲?。?a target="_blank" title="Marking" href="/zf/marking.html">ZF；Package：SOT1220-2；30 V, P-channel Trench MOSFET
    
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
? Logic-level compatible
? Very fast switching
? Trench MOS
    文件：327.21 Kbytes 頁數(shù)：15 Pages
    NEXPERIA
    安世
    

    PMPB14XN
    絲印：5D；Package：SOT1220；40 V, N-channel Trench MOSFET
    
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
? Very fast switching
? Low threshold voltage
? Trench MOSFE
    文件：311.67 Kbytes 頁數(shù)：14 Pages
    NEXPERIA
    安世
    

    PMPB14XP
    絲印：5B；Package：SOT1220；12 V, P-channel Trench MOSFET
    
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
? Low threshold voltage
? Trench MOSFET technology
? Side we
    文件：345.99 Kbytes 頁數(shù)：15 Pages
    NEXPERIA
    安世
    

    PMPB15ENE
    絲?。?a target="_blank" title="Marking" href="/5n/marking.html">5N；Package：SOT1220；30 V, N-channel Trench MOSFET
    
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6
(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
? Logic-level compatible
? Side wettable flanks for optical solder insp
    文件：294.01 Kbytes 頁數(shù)：14 Pages
    NEXPERIA
    安世
    

    PMPB15XP
    12 V, single P-channel Trench MOSFET
    
General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
? 1.5 kV ESD protection (human body model)
? Trench MOSFET technology
    文件：260.18 Kbytes 頁數(shù)：14 Pages
    恩XP
    恩XP
    

    PMPB15XP
    絲印：1A；Package：SOT1220；12 V, single P-channel Trench MOSFET
    
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
? 1.5 kV ESD protection (human body model)
? Trench MOSFET 
    文件：375.39 Kbytes 頁數(shù)：15 Pages
    NEXPERIA
    安世
    

    PMPB15XPA
    絲?。?a target="_blank" title="Marking" href="/4j/marking.html">4J；Package：SOT1220；12 V, P-channel Trench MOSFET
    
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
? Low threshold voltage
? Trench MOSFET technology
? Side we
    文件：302.91 Kbytes 頁數(shù)：14 Pages
    NEXPERIA
    安世
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • 組態(tài)：
      Single
    • MOS類型：
      N
    • VDS(V)：
      1000
    • VGS(V)：
      ±30
    • Vth(V)：
      2/-/4
    • RDS(ON)(mΩ)max.at VGS=10V：
      4200/5500
    • Ciss(pF)：
      955
    • Coss(pF)：
      80
    • Crss(pF)：
      13
    • Qg(nC)_10V：
      25
    • Qgs(nC)：
      4.8
    • Qgd(nC)：
      10.2
    • EAS (mJ)：
      17.8
    • ID(A)_Tc=25℃：
      4
    • ID(A)_Tc=100℃：
      2.22
    • PD(W)_Tc=25℃：
      123
    • ESD Diode：
      X
    • Schokkty Diode：
      X
    
            
    
        
    
            
    供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
    
                
    



    		

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    MEXICO
    		

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    DIP
    		

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    AmericanPowerConversion(
    		

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    SMD
    		

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