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首頁(yè) >PHD>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
PHD12N10E	文件：79.16 Kbytes Page：7 Pages	PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching application 文件：79.16 Kbytes 頁(yè)數(shù)：7 Pages	PHI PHI	PHI
PHD12NQ15T	文件：111.85 Kbytes Page：12 Pages	N-channel TrenchMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. FEATURES ? ’Trench’ technology ? 文件：111.85 Kbytes 頁(yè)數(shù)：12 Pages	PHI PHI	PHI
PHD12NQ15T	文件：298.64 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：298.64 Kbytes 頁(yè)數(shù)：2 Pages	ISC 無(wú)錫固電	ISC
PHD13003C	文件：438.34 Kbytes Page：13 Pages	NPN power transistor with integrated diode General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 (TO-92) plastic package. Features and benefits ? High typical DC current gain ? Fast switching ? High voltage capability ? Integrate 文件：438.34 Kbytes 頁(yè)數(shù)：13 Pages	WEEN 瑞能半導(dǎo)體	WEEN
PHD13005	文件：504.95 Kbytes Page：15 Pages	NPN power transistor with integrated diode General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 (TO-220AB) plastic package. Features and benefits ? Low thermal resistance ? Fast switching ? High voltage capability ? Integrated anti-parallel E 文件：504.95 Kbytes 頁(yè)數(shù)：15 Pages	WEEN 瑞能半導(dǎo)體	WEEN
PHD13005	文件：190.51 Kbytes Page：14 Pages	NPN power transistor with integrated diode General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 plastic package. Features and benefits ■ Fast switching ■ High voltage capability ■ Integrated anti-parallel E-C diode ■ Low thermal resistance A 文件：190.51 Kbytes 頁(yè)數(shù)：14 Pages	恩XP	恩XP
PHD14NQ20T	文件：269.78 Kbytes Page：14 Pages	TrenchMOS standard level FET Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS? technology. Product availability: PHP14NQ20T in SOT78 (TO-220AB) PHB14NQ20T in SOT404 (D2-PAK) PHD14NQ20T in SOT428 (D-PAK). Features ■ Low on-state resistance ■ Fast switching 文件：269.78 Kbytes 頁(yè)數(shù)：14 Pages	PHI PHI	PHI
PHD14NQ20T	文件：298.98 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.23Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：298.98 Kbytes 頁(yè)數(shù)：2 Pages	ISC 無(wú)錫固電	ISC
PHD16N03LT	文件：298.85 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 67mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：298.85 Kbytes 頁(yè)數(shù)：2 Pages	ISC 無(wú)錫固電	ISC
PHD16N03T	文件：240.51 Kbytes Page：12 Pages	TrenchMOS standard level FET Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS? technology. Product availability: PHD16N03T in SOT428 (D-PAK). Features ■ Fast Switching ■ TrenchMOSTM technology. Applications ■ DC-to-DC converters ■ General p 文件：240.51 Kbytes 頁(yè)數(shù)：12 Pages	PHI PHI	PHI

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技術(shù)參數(shù)

Package name：
DPAK
Product status：
Production
Channel type：
N
Number of transistors：
1
V_DS [max] (V)：
30
R_DSon [max] @ V_GS = 10 V (mΩ)：
5.5
R_DSon [max] @ V_GS = 5 V (mΩ)：
7.5
T_j [max] (°C)：
175
I_D [max] (A)：
75
Q_GD [typ] (nC)：
8
P_tot [max] (W)：
166
Q_r [typ] (nC)：
33
V_GSth [typ] (V)：
1.9
Automotive qualified：
N
C_iss [typ] (pF)：
2180
C_oss [typ] (pF)：
600
Date：
2011-01-05

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
芯有半導(dǎo)體（深圳）有限公司	PHD3055E	PHI	05+	原廠原裝	5051	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市勤思達(dá)科技有限公司	PHD108NQ03LT	恩XP	1415+	TO-252	28500	全新原裝正品,優(yōu)勢(shì)熱賣	詢價(jià)
深圳市益百分電子有限公司	PHD78NQ03LT	PHI	11+	SOT252	5000	原裝現(xiàn)貨價(jià)格有優(yōu)勢(shì)量多可發(fā)貨	詢價(jià)
深圳市粵科源興科技有限公司	PHD77NQ03T	恩XP	13+		15039	原裝分銷	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	PHD77NQ03T	恩XP		TO252	5000	正品原裝--自家現(xiàn)貨-實(shí)單可談	詢價(jià)
深圳市一線半導(dǎo)體有限公司	PHD0551E3DS-F-0		24+	QFP	68	真實(shí)現(xiàn)貨庫(kù)存	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	PHD98N03LT	恩XP	23+	SOT428	48100	原裝正品,假一罰十	詢價(jià)
深圳市卓越微芯電子有限公司	PHD45N03LTA	PHI	25+	SOT428	64	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢價(jià)
深圳市利加科技有限公司	PHD108NQ03LT	恩XP	16+	NA	8800	誠(chéng)信經(jīng)營(yíng)	詢價(jià)
諦輝(北京/上海/青島 )電子科技有限公司	PHD101NQ03LT	PHILPS	25+	TO263-2.5	18000	原廠直接發(fā)貨進(jìn)口原裝	詢價(jià)

更多PHD供應(yīng)商更新時(shí)間2026-1-19 16:28:00

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