TrenchMOS standard level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS? technology. Product availability: PHD16N03T in SOT428 (D-PAK). Features ■ Fast Switching ■ TrenchMOSTM technology. Applications ■ DC-to-DC converters ■ General p

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PHI

PHI

TrenchMOS? standard level FET

Description\nN-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS? technology.\nProduct availability:\n? PHD16N03T in SOT428 (D-PAK).\n? ■ Fast Switching\n■ TrenchMOSTM technology.Applications\n■ DC-to-DC converters\n■ General purpose switch.;

恩XP

16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

文件：107.16 Kbytes 頁數(shù)：8 Pages

INTERSIL

16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

文件：130.419 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導體

N-Channel 30-V (D-S) MOSFET

文件：959.98 Kbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導體