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          首頁 >PHD>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          PHD108NQ03LT

          TrenchMOS logic level FET

          Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS? technology. Product availability: PHP108NQ03LT in SOT78 (TO-220AB) PHB108NQ03LT in SOT404 (D2-PAK) PHD108NQ03LT in SOT428 (D-PAK). Features ■Logic level compatible ■

          文件:269.45 Kbytes 頁數:14 Pages

          PHI

          PHI

          PHI

          PHD10N10E

          PowerMOS transistor

          GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suuitable for surface mounting. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applicatio

          文件:76.28 Kbytes 頁數:7 Pages

          PHI

          PHI

          PHI

          PHD10N10E

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:298.39 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          PHD110NQ03LT

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.6mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:299 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          PHD11N03LT

          N-channel TrenchMOS transistor Logic level FET

          GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’ technology ? Low on-state resistance ? Fast switching ? Logic level compatible Applications:- ? d.c. to d.c. converters ? switche

          文件:105.12 Kbytes 頁數:11 Pages

          PHI

          PHI

          PHI

          PHD11N03LT

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.13Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:298.27 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          PHD11N06LT

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.13Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:298.44 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          PHD11N06LT

          N-channel TrenchMOS transistor Logic level FET

          GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting pa

          文件:114.92 Kbytes 頁數:12 Pages

          PHI

          PHI

          PHI

          PHD11N06LT

          TrenchMOS transistor Logic level FET

          GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting pa

          文件:76.41 Kbytes 頁數:9 Pages

          PHI

          PHI

          PHI

          PHD12N10E

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.16Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:298.39 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          技術參數

          • Package name:

            DPAK

          • Product status:

            Production

          • Channel type:

            N

          • Number of transistors:

            1

          • V_DS [max] (V):

            30

          • R_DSon [max] @ V_GS = 10 V (mΩ):

            5.5

          • R_DSon [max] @ V_GS = 5 V (mΩ):

            7.5

          • T_j [max] (°C):

            175

          • I_D [max] (A):

            75

          • Q_GD [typ] (nC):

            8

          • P_tot [max] (W):

            166

          • Q_r [typ] (nC):

            33

          • V_GSth [typ] (V):

            1.9

          • Automotive qualified:

            N

          • C_iss [typ] (pF):

            2180

          • C_oss [typ] (pF):

            600

          • Date:

            2011-01-05

          供應商型號品牌批號封裝庫存備注價格
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          05+
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          更多PHD供應商 更新時間2026-1-19 10:21:00
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