isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 67mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：298.85 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel TrenchMOS??logic level FET

文件：92.88 Kbytes 頁數(shù)：12 Pages

PHI

PHI

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世

TrenchMOS standard level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS? technology. Product availability: PHD16N03T in SOT428 (D-PAK). Features ■ Fast Switching ■ TrenchMOSTM technology. Applications ■ DC-to-DC converters ■ General p

文件：240.51 Kbytes 頁數(shù)：12 Pages

PHI

PHI

16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

文件：107.16 Kbytes 頁數(shù)：8 Pages

INTERSIL

16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

文件：130.419 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導體