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          首頁 >PHD>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          PHD18NQ10T

          N-channel TrenchMOS transistor

          GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’ technology ? Low on-state resistance ? Fast switching ? Low thermal resistance Applications:- ? d.c. to d.c. converters ? switched mode power s

          文件:121.81 Kbytes 頁數(shù):12 Pages

          PHI

          PHI

          PHI

          PHD18NQ10T

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 90mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:299.19 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PHD20N06T

          N-Channel 60-V (D-S) MOSFET

          FEATURES ? TrenchFET? Power MOSFET ? 175 °C Junction Temperature

          文件:896.95 Kbytes 頁數(shù):6 Pages

          VBSEMI

          微碧半導(dǎo)體

          PHD20N06T

          N-channel TrenchMOS standard level FET

          1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits L

          文件:860.13 Kbytes 頁數(shù):12 Pages

          NEXPERIA

          安世

          PHD20N06T

          N-channel TrenchMOS transistor

          Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS?1 technology. Features ■ TrenchMOS? technology ■ Low on-state resistance ■ Fast switching. Applications ■ Switched mode power supplies ■ DC to DC converters ■ General purpose switch.

          文件:307.45 Kbytes 頁數(shù):13 Pages

          PHI

          PHI

          PHI

          PHD20N06T

          N-channel TrenchMOS standard level FET

          General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Low conduc

          文件:379.72 Kbytes 頁數(shù):12 Pages

          恩XP

          恩XP

          PHD20N06T

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 77mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:299.01 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PHD20N06T118

          N-Channel 60-V (D-S) MOSFET

          FEATURES ? TrenchFET? Power MOSFET ? 175 °C Junction Temperature

          文件:896.97 Kbytes 頁數(shù):6 Pages

          VBSEMI

          微碧半導(dǎo)體

          PHD21N06LT

          N-channel TrenchMOS? transistor Logic level FET

          FEATURES ? ’Trench’ technology ? Low on-state resistance ? Fast switching ? Logic level compatible GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:- ? d.c. to d.c. converters ? swi

          文件:233.59 Kbytes 頁數(shù):12 Pages

          NEXPERIA

          安世

          PHD21N06LT

          TrenchMOS transistor Logic level FET

          GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’ technology ? Low on-state resistance ? Fast switching ? Logic level compatible Applications: ? d.c. to d.c. co

          文件:82.44 Kbytes 頁數(shù):10 Pages

          PHI

          PHI

          PHI

          技術(shù)參數(shù)

          • Package name:

            DPAK

          • Product status:

            Production

          • Channel type:

            N

          • Number of transistors:

            1

          • V_DS [max] (V):

            30

          • R_DSon [max] @ V_GS = 10 V (mΩ):

            5.5

          • R_DSon [max] @ V_GS = 5 V (mΩ):

            7.5

          • T_j [max] (°C):

            175

          • I_D [max] (A):

            75

          • Q_GD [typ] (nC):

            8

          • P_tot [max] (W):

            166

          • Q_r [typ] (nC):

            33

          • V_GSth [typ] (V):

            1.9

          • Automotive qualified:

            N

          • C_iss [typ] (pF):

            2180

          • C_oss [typ] (pF):

            600

          • Date:

            2011-01-05

          供應(yīng)商型號品牌批號封裝庫存備注價格
          PHI
          05+
          原廠原裝
          5051
          只做全新原裝真實現(xiàn)貨供應(yīng)
          詢價
          恩XP
          1415+
          TO-252
          28500
          全新原裝正品,優(yōu)勢熱賣
          詢價
          PHI
          11+
          SOT252
          5000
          原裝現(xiàn)貨價格有優(yōu)勢量多可發(fā)貨
          詢價
          恩XP
          13+
          15039
          原裝分銷
          詢價
          恩XP
          TO252
          5000
          正品原裝--自家現(xiàn)貨-實單可談
          詢價
          24+
          QFP
          68
          真實現(xiàn)貨庫存
          詢價
          恩XP
          23+
          SOT428
          48100
          原裝正品,假一罰十
          詢價
          PHI
          25+
          SOT428
          64
          百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價
          恩XP
          16+
          NA
          8800
          誠信經(jīng)營
          詢價
          PHILPS
          25+
          TO263-2.5
          18000
          原廠直接發(fā)貨進口原裝
          詢價
          更多PHD供應(yīng)商 更新時間2026-1-19 16:28:00
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