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    首頁 >PHB>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    PHB101NQ04LT

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) =8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

    文件:306.27 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    PHB101NQ04T

    N-channel TrenchMOS standard level FET

    Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS? technology. Features ■ Standard level threshold ■ Very low on-state resistance. Applications ■ Motors, lamps, solenoids ■ Uninterruptible power supplies ■ DC-to-DC converters ■ Ge

    文件:94.98 Kbytes 頁數(shù):13 Pages

    PHI

    PHI

    PHI

    PHB101NQ04T

    N-channel TrenchMOS standard level FET

    General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Low conduc

    文件:186.47 Kbytes 頁數(shù):12 Pages

    恩XP

    恩XP

    PHB108NQ03LT

    N-channel TrenchMOS logic level FET

    General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS? technology. Features ■Logic level threshold ■Very low on-state resistance ■Lead-free construction ■Low gate charge Applications ■DC-to-DC conve

    文件:108.63 Kbytes 頁數(shù):14 Pages

    恩XP

    恩XP

    PHB108NQ03LT

    TrenchMOS logic level FET

    Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS? technology. Product availability: PHP108NQ03LT in SOT78 (TO-220AB) PHB108NQ03LT in SOT404 (D2-PAK) PHD108NQ03LT in SOT428 (D-PAK). Features ■Logic level compatible ■

    文件:269.45 Kbytes 頁數(shù):14 Pages

    PHI

    PHI

    PHI

    PHB108NQ03LT

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·Switch-mode Power Supplies ·Power Motor Control

    文件:345.15 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    PHB10N40

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.55Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·Switch-mode Power Supplies ·Power Motor Control

    文件:345.07 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    PHB10N40

    PowerMOS transistor

    GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use i

    文件:69.81 Kbytes 頁數(shù):7 Pages

    PHI

    PHI

    PHI

    PHB10N40T

    N-Channel 650 V (D-S) MOSFET

    FEATURES ? Reduced trr, Qrr, and IRRM ? Low figure-of-merit (FOM) Ron x Qg ? Low input capacitance (Ciss) ? Low switching losses due to reduced Qrr ? Ultra low gate charge (Qg) ? Avalanche energy rated (UIS) APPLICATIONS ? Telecommunications - Server and telecom power supplies ? Light

    文件:1.03829 Mbytes 頁數(shù):8 Pages

    VBSEMI

    微碧半導(dǎo)體

    PHB110NQ06LT

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:344.19 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    技術(shù)參數(shù)

    • Package name:

      D2PAK

    • Product status:

      Production

    • Channel type:

      N

    • Nr of transistors:

      1

    • VDS [max] (V):

      75

    • RDSon [max] @ VGS = 10 V (mΩ):

      9

    • Tj [max] (°C):

      175

    • ID [max] (A):

      75

    • QGD [typ] (nC):

      48.2

    • QG(tot) [typ] @ VGS = 10 V (nC):

      113.1

    • Ptot [max] (W):

      230

    • Qr [typ] (nC):

      270

    • VGSth [typ] (V):

      3

    • Automotive qualified:

      N

    • Ciss [typ] (pF):

      4860

    • Coss [typ] (pF):

      840

    • Release date:

      2011-01-05

    供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
    PHI
    25+
    TO-263
    157
    百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
    詢價(jià)
    恩XP
    2016+
    TO-263
    3000
    只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
    詢價(jià)
    PHI
    01+
    TO220
    389
    原裝現(xiàn)貨海量庫存歡迎咨詢
    詢價(jià)
    乾坤
    24+
    2520
    10952
    全新原裝數(shù)量均有多電話咨詢
    詢價(jià)
    PHI
    2023+
    TO-263
    5800
    進(jìn)口原裝,現(xiàn)貨熱賣
    詢價(jià)
    NEXPERIA/安世
    SOT404
    23+
    48000
    授權(quán)代理/原廠FAE技術(shù)支持
    詢價(jià)
    CYNTEY
    23+
    SMD
    8650
    受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
    詢價(jià)
    VBSEMI/臺灣微碧
    24+
    D2-PAK
    60000
    詢價(jià)
    PHI
    22+
    TO-263
    5000
    全新原裝現(xiàn)貨!自家?guī)齑?
    詢價(jià)
    恩XP
    25+
    N/A
    6000
    現(xiàn)貨
    詢價(jià)
    更多PHB供應(yīng)商 更新時(shí)間2026-1-22 8:21:00

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