TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting pa

文件：76.41 Kbytes 頁(yè)數(shù)：9 Pages

PHI

PHI

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting pa

文件：114.92 Kbytes 頁(yè)數(shù)：12 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.13Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：344.43 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

55 V, N-channel trenchMOS transistor logic level FET

GENERAL DESCRIPTION\nN-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology.The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.\nThe PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting package.\nThe ? ’Trench’technology\n? Low on-state resistance\n? Fast switching\n? Logic level compatible;

恩XP