| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/nce30p40k/marking.html">NCE30P40K;Package:TO-252-2L;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P40K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS = -30V,ID = -40A RDS(ON) =7.8mΩ @ VGS= -10V (Typ) RDS(ON) =11.5mΩ @ VGS= -4.5V (Ty 文件:734.47 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30p55k/marking.html">NCE30P55K;Package:TO-252-2L;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P55K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-30V,ID =-55A RDS(ON) 文件:581.78 Kbytes 頁數(shù):6 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30p55l/marking.html">NCE30P55L;Package:TO-251S;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P55L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-30V,ID =-55A RDS(ON) 文件:319.69 Kbytes 頁數(shù):6 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30p60g/marking.html">NCE30P60G;Package:DFN5x6;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P60G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-30V,ID =-60A RDS(ON) 文件:344.53 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:NCE30P85K;Package:TO-252-2L;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P85K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS = -30V,ID = -85A RDS(ON) =5.3mΩ @ VGS= -10V (Typ) RDS(ON) =7.6mΩ @ VGS= -4.5V (Typ 文件:754.06 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30td120ut/marking.html">NCE30TD120UT;Package:TO-247;1200V, 30A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology Offering ? Very low VCE(sat 文件:363.66 Kbytes 頁數(shù):6 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:NCE30TD60B;Package:TO-220;600V, 30A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology offering ? Very low VCE(sat) 文件:1.23718 Mbytes 頁數(shù):8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30td60bd/marking.html">NCE30TD60BD;Package:TO-263;600V, 30A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology offering ? Very low VCE(sat) 文件:1.04893 Mbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:NCE30TD60BF;Package:TO-220F;600V, 30A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology offering ? Very low VCE(sat) 文件:1.19913 Mbytes 頁數(shù):8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30td60bp/marking.html">NCE30TD60BP;Package:TO-3P;600V, 30A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology offering ? Very low VCE(sat) 文件:1.0325 Mbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER |
技術(shù)參數(shù)
- Technology:
Trench
- Product status:
New
- Package:
SOP-8
- Polarity:
P
- BVDSS_(V):
-30
- ID_(A):
-7
- VTH_(V):
-1.6
- RDS(ON)_@10VTyp_(mΩ):
27
- RDS(ON)_@10VMax_(mΩ):
31
- VGS(th)_(V):
±20
- CISS_(pF):
625
- QG_(nC):
13.9
- PD_(W):
2.5
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NCE/新潔能 |
ROHS .original |
SOT-23(SOT-23-3) |
12000 |
電子元器件供應(yīng)原裝現(xiàn)貨. 優(yōu)質(zhì)獨(dú)立分銷。原廠核心渠道 |
詢價(jià) | ||
NCE |
20+ |
TO-252 |
36900 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
NCE原裝 |
25+23+ |
SOT23-3 |
28413 |
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
NCE/新潔能 |
21+ |
SOT-23 |
30000 |
百域芯優(yōu)勢(shì) 實(shí)單必成 可開13點(diǎn)增值稅 |
詢價(jià) | ||
NCE/新潔能 |
23+ |
SOP-8 |
13146 |
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) | ||
NCE/新潔能 |
22+ |
S0T-23 |
30000 |
原裝正品 |
詢價(jià) | ||
PRODUCTION |
1905+ |
SOT-23-3L |
30000 |
原裝正品 |
詢價(jià) | ||
NCE/新潔能 |
22+ |
SOT252-4L |
6000 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價(jià) | ||
NCE/新潔能 |
2223+ |
26800 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn) |
詢價(jià) | |||
NCE |
24+ |
SOT23 |
66800 |
原廠授權(quán)一級(jí)代理,專注汽車、醫(yī)療、工業(yè)、新能源! |
詢價(jià) |
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