| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NCE3 | CIT SWITCH 文件:252.92 Kbytes 頁數(shù):3 Pages | CIT | CIT | |
絲?。?a target="_blank" title="Marking" href="/3008n/marking.html">3008N;Package:SOT23-6L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008N uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =30V,ID =8A RDS(ON) 文件:338.9 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/3008xm/marking.html">3008XM;Package:SOT-89-3L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008XM uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 8A RDS(ON) 文件:636.1 Kbytes 頁數(shù):8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/3008y/marking.html">3008Y;Package:SOT23-3L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008Y uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =30V,ID =8A RDS(ON) 文件:313.36 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce3009s/marking.html">NCE3009S;Package:SOP-8;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3009S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =9A RDS(ON) 文件:325 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:3013J;Package:DFN2X2-6L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3013J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =13A RDS(ON) 文件:313.28 Kbytes 頁數(shù):8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce3015s/marking.html">NCE3015S;Package:SOP-8;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3015S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =15A RDS(ON) 文件:301.11 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce3030q/marking.html">NCE3030Q;Package:PDFN3.3X3.3-8L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3030Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Pow 文件:745.85 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce3040q/marking.html">NCE3040Q;Package:DFN3.3x3.3-8L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3040Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification 文件:637.84 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:NCE3045G;Package:DFN5x6-8L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3045G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification 文件:659.57 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER |
技術(shù)參數(shù)
- Technology:
Trench
- Product status:
New
- Package:
SOP-8
- Polarity:
P
- BVDSS_(V):
-30
- ID_(A):
-7
- VTH_(V):
-1.6
- RDS(ON)_@10VTyp_(mΩ):
27
- RDS(ON)_@10VMax_(mΩ):
31
- VGS(th)_(V):
±20
- CISS_(pF):
625
- QG_(nC):
13.9
- PD_(W):
2.5
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NCEPOWER |
19+ |
SOP |
4000 |
原裝正品 |
詢價(jià) | ||
NCE |
20+ |
SOT23 |
11520 |
特價(jià)全新原裝公司現(xiàn)貨 |
詢價(jià) | ||
TECH PUBLIC(臺(tái)舟) |
23+ |
SOT-23 |
5950 |
三極管/MOS管/晶體管 > 場(chǎng)效應(yīng)管(MOSFET) |
詢價(jià) | ||
NA |
23+ |
NA |
26094 |
10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品,做服務(wù)型企業(yè) |
詢價(jià) | ||
NCE/新潔能 |
22+ |
SOP-8 |
6300 |
只做原裝,假一罰百,長(zhǎng)期供貨。 |
詢價(jià) | ||
NCE/新潔能 |
23+ |
SOP-8 |
13146 |
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) | ||
NCE/新潔能 |
22+ |
SOT252-4L |
6000 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價(jià) | ||
NCE |
22+ |
TO-252 |
25000 |
只有原裝絕對(duì)原裝,支持BOM配單! |
詢價(jià) | ||
NCEPOWER |
23+ |
SOT-23 |
15320 |
詢價(jià) | |||
NCE |
23+ |
SOIC-8 |
40000 |
正規(guī)渠道,只有原裝! |
詢價(jià) |
相關(guān)規(guī)格書
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- TD62308
- TD62308APG
- TD62308AFG
- TL074
- TL074
- TL074
- TL074B
- TL074M
- SN65LVDT3486B
- PS9351L
- PS9317L2
- PS9313L2
- PS9309L2
- PS9308L2
- PS9306L2
- PS9305L
相關(guān)庫(kù)存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074
- TL074A
- TL074-EP
- TL074H
- SN65LVDT3486AD
- PS9307L2
- PS9332L
- PS9313L
- PS9307AL
- PS9351L2
- PS9331L
- PS9303L

