| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/nce30h29d/marking.html">NCE30H29D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H29D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V ,ID =290A RDS(ON) 文件：421.22 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30h33ll/marking.html">NCE30H33LL；Package：TOLL；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H33LL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply 文件：647.56 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30nd35q/marking.html">NCE30ND35Q；Package：PDFN3.3X3.3-8L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND35Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =35A RDS(ON) 文件：656.45 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30np07s/marking.html">NCE30NP07S；Package：SOP-8；N and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP07S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6.5A RDS(ON) 文件：474.86 Kbytes 頁數(shù)：11 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/30np1812g/marking.html">30NP1812G；Package：DFN5X6-8L；NCE N-Channel and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel ● VDS = 30V,ID = 18A ● VDS = -30V,ID =- 12A RDS(ON) 文件：932.92 Kbytes 頁數(shù)：10 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印：NCE30NP1812K；Package：TO-252-4L；N and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812K uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS =30V,ID =18A RDS(ON) 文件：385.33 Kbytes 頁數(shù)：10 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30np1812q/marking.html">NCE30NP1812Q；Package：DFN3X3-8L；NCE N-Channel and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel ● VDS = 30V,ID = 18A ● VDS = -30V,ID =- 12A RDS(ON) 文件：443.08 Kbytes 頁數(shù)：10 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/30np4030g/marking.html">30NP4030G；Package：DFN5X6-8L；NCE N&P-Channel complementary Power MOSFET Description The NCE30NP4030G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel ● VDS = 30V,ID = 40A ● VDS = -30V,ID =- 30A RDS(ON) 文件：418.85 Kbytes 頁數(shù)：11 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30p06j/marking.html">NCE30P06J；Package：DFN2X2-6L；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P06J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -30V,ID = -6.5A RDS(ON 文件：269.51 Kbytes 頁數(shù)：6 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印：NCE30P10S；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P10S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -10A RDS(ON) 文件：282.38 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER |
技術(shù)參數(shù)
- Technology：
Trench
- Product status：
New
- Package：
SOP-8
- Polarity：
P
- BVDSS_(V)：
-30
- ID_(A)：
-7
- VTH_(V)：
-1.6
- RDS(ON)_@10VTyp_(mΩ)：
27
- RDS(ON)_@10VMax_(mΩ)：
31
- VGS(th)_(V)：
±20
- CISS_(pF)：
625
- QG_(nC)：
13.9
- PD_(W)：
2.5
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NCEPOWER |
19+ |
SOP |
4000 |
原裝正品 |
詢價 | ||
NCE |
20+ |
SOT23 |
11520 |
特價全新原裝公司現(xiàn)貨 |
詢價 | ||
NA |
23+ |
NA |
26094 |
10年以上分銷經(jīng)驗原裝進口正品,做服務(wù)型企業(yè) |
詢價 | ||
NCE/新潔能 |
23+ |
SOP-8 |
13146 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價 | ||
TECH PUBLIC(臺舟) |
23+ |
SOT-23 |
5950 |
三極管/MOS管/晶體管 > 場效應(yīng)管(MOSFET) |
詢價 | ||
NCEPOWER |
23+ |
SOT-23 |
15320 |
詢價 | |||
NCE |
23+ |
DFN8 |
3233 |
原廠原裝正品 |
詢價 | ||
NCE/新潔能 |
22+ |
SOP-8 |
6300 |
只做原裝,假一罰百,長期供貨。 |
詢價 | ||
NCE |
20+ |
TO-252 |
46 |
正規(guī)渠道貨源 |
詢價 | ||
NCE新潔能 |
21+ |
TO-3P |
25000 |
進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營 |
詢價 |
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