| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/nce30h10bk/marking.html">NCE30H10BK;Package:TO-252-2L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON) 文件:685.84 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30h11bg/marking.html">NCE30H11BG;Package:DFN5X6-8L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON)=2.3mΩ (typical) @ VGS=10V RDS(ON)=3.8mΩ (typical) @ VGS=4.5V ● Excellent ga 文件:637.1 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30h11bk/marking.html">NCE30H11BK;Package:TO-252-2L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON) =2.7mΩ (typical) @ VGS=10V RDS(ON) =3.9mΩ (typical) @ VGS=4.5V ● High densi 文件:610.37 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30h11k/marking.html">NCE30H11K;Package:TO-252-2L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON) 文件:631.87 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30h12ak/marking.html">NCE30H12AK;Package:TO-252-2L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H12AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =120A RDS(ON) 文件:726.18 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30h14k/marking.html">NCE30H14K;Package:TO-252-2L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H14K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =140A RDS(ON) 文件:602.43 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30h15b/marking.html">NCE30H15B;Package:TO-220-3L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =150A RDS(ON) 文件:728.07 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30h15bg/marking.html">NCE30H15BG;Package:PDFN5X6-8;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15BG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features 文件:759.59 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:NCE30H15BK;Package:TO-252-2L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =150A RDS(ON) 文件:698.36 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:NCE30H28;Package:TO-220-3L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H28 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V ,ID =280A RDS(ON) 文件:699.57 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER |
技術(shù)參數(shù)
- Technology:
Trench
- Product status:
New
- Package:
SOP-8
- Polarity:
P
- BVDSS_(V):
-30
- ID_(A):
-7
- VTH_(V):
-1.6
- RDS(ON)_@10VTyp_(mΩ):
27
- RDS(ON)_@10VMax_(mΩ):
31
- VGS(th)_(V):
±20
- CISS_(pF):
625
- QG_(nC):
13.9
- PD_(W):
2.5
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NCE |
25+ |
SOT-23 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
NCE |
20+ |
SOT23 |
11520 |
特價(jià)全新原裝公司現(xiàn)貨 |
詢價(jià) | ||
NCE/新潔能 |
22+ |
TO-252 |
18000 |
原裝正品 |
詢價(jià) | ||
NCEPOWER |
19+ |
SOP |
4000 |
原裝正品 |
詢價(jià) | ||
NA |
23+ |
NA |
26094 |
10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品,做服務(wù)型企業(yè) |
詢價(jià) | ||
NCE/新潔能 |
18+ |
SOT23 |
5 |
只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
NCE/新潔能 |
23+ |
SOP-8 |
13146 |
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) | ||
NCE/一定原 |
26+ |
SOT-23 |
12000 |
原裝,正品 |
詢價(jià) | ||
NCEPOWER |
23+ |
SOT-23 |
15320 |
詢價(jià) | |||
NCE新潔能 |
25+ |
TO-3P |
100000 |
新結(jié)能全線供應(yīng),支持終端生產(chǎn) |
詢價(jià) |
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- SE1
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- PERICOMPI7C8150
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