| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/nce3065g/marking.html">NCE3065G;Package:DFN5x6-8L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectificatio 文件:669.33 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce3065k/marking.html">NCE3065K;Package:TO-252-2L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =65A RDS(ON) 文件:617.25 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce3065q/marking.html">NCE3065Q;Package:DFN3.3X3.3-8L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification 文件:727.88 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce3068q/marking.html">NCE3068Q;Package:PDFN3.3X3.3-8L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3068Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features ● VDS =30V,ID =6 文件:838.4 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce3080ia/marking.html">NCE3080IA;Package:TO-251;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =80A RDS(ON) 文件:288.89 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce3085k/marking.html">NCE3085K;Package:TO-252-2L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3085K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =85A RDS(ON) =4.2 mΩ @ VGS=10V (Typ) RDS(ON) =7.0mΩ @ VGS=4.5V (Typ) ● High density cel 文件:679.64 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce3090k/marking.html">NCE3090K;Package:TO-252-2L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3090K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =90A RDS(ON) =3.4mΩ (typical) @ VGS=10V RDS(ON) =6.9mΩ (typical) @ VGS=4.5V ● High density 文件:620.18 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce3095g/marking.html">NCE3095G;Package:DFN5x6-8L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3095G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification 文件:411.09 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce3095k/marking.html">NCE3095K;Package:TO-252-2L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3095K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =95A RDS(ON) 文件:647.62 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:NCE30H10BG;Package:DFN5X6-8L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10BG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power suppl 文件:642.07 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER |
技術(shù)參數(shù)
- Technology:
Trench
- Product status:
New
- Package:
SOP-8
- Polarity:
P
- BVDSS_(V):
-30
- ID_(A):
-7
- VTH_(V):
-1.6
- RDS(ON)_@10VTyp_(mΩ):
27
- RDS(ON)_@10VMax_(mΩ):
31
- VGS(th)_(V):
±20
- CISS_(pF):
625
- QG_(nC):
13.9
- PD_(W):
2.5
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NCE |
20+ |
TO-252 |
36900 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
NCE/新潔能 |
ROHS .original |
SOT-23(SOT-23-3) |
12000 |
電子元器件供應(yīng)原裝現(xiàn)貨. 優(yōu)質(zhì)獨(dú)立分銷。原廠核心渠道 |
詢價(jià) | ||
NCE |
22+ |
TO-252 |
25000 |
只有原裝絕對(duì)原裝,支持BOM配單! |
詢價(jià) | ||
NCE/新潔能 |
22+ |
S0T-23 |
30000 |
原裝正品 |
詢價(jià) | ||
NCE/新潔能 |
1925+ |
SOT23 |
12500 |
原裝現(xiàn)貨價(jià)格優(yōu)勢(shì)可供更多可出樣 |
詢價(jià) | ||
NCE/新潔能 |
23+ |
SOP-8 |
13146 |
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) | ||
NCE/新潔能 |
21+ |
SOT-23 |
30000 |
百域芯優(yōu)勢(shì) 實(shí)單必成 可開13點(diǎn)增值稅 |
詢價(jià) | ||
NCE/新潔能 |
23+ |
SOP-8 |
9600 |
十七年VIP會(huì)員,誠(chéng)信經(jīng)營(yíng),一手貨源,原裝正品可零售! |
詢價(jià) | ||
NCE/新潔能 |
25+ |
SOP8 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
NCE/新潔能 |
2024 |
DFN3.3X3.3 |
38800 |
15余年信譽(yù)價(jià)格市場(chǎng)最低 力挺實(shí)單提供一站式BOM配單服務(wù)! |
詢價(jià) |
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