| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印:NCE30P12BS;Package:SOP-8;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12BS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -12A RDS(ON) 文件:714.95 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30p15as/marking.html">NCE30P15AS;Package:SOP-8;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P15AS uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -15A RDS(ON) 文件:347.95 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:NCE30P16Q;Package:DFN3.3X3.3;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P16Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -16A RDS(ON) 文件:306 Kbytes 頁數(shù):6 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30p20q/marking.html">NCE30P20Q;Package:DFN3.3X3.3-8L;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P20Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -20A RDS(ON) 文件:679.1 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30p25bq/marking.html">NCE30P25BQ;Package:DFN3.3X3.3-8L;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P25BQ uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. Application ● PWM applications ● Load switch ● Power management General Features ● VDS = -30V,ID = -25A RDS(O 文件:740.37 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30p25q/marking.html">NCE30P25Q;Package:DFN3.3X3.3-8L;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P25Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -25A RDS(ON) 文件:687.05 Kbytes 頁數(shù):9 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30p28q/marking.html">NCE30P28Q;Package:DFN3.3X3.3-8L;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P28Q uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. Application ●Power management ●Load switch General Features ● VDS = -30V,ID = -28A RDS(ON) 文件:744.19 Kbytes 頁數(shù):8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30p30g/marking.html">NCE30P30G;Package:DFN5X6-8L;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P30G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -30A RDS(ON) 文件:363.33 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:NCE30P30K;Package:TO-252-2L;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-30V,ID =-30A RDS(ON) 文件:426.32 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce30p30l/marking.html">NCE30P30L;Package:TO-25IS;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P30L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-30V,ID =-30A RDS(ON) 文件:340.01 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER |
技術(shù)參數(shù)
- Technology:
Trench
- Product status:
New
- Package:
SOP-8
- Polarity:
P
- BVDSS_(V):
-30
- ID_(A):
-7
- VTH_(V):
-1.6
- RDS(ON)_@10VTyp_(mΩ):
27
- RDS(ON)_@10VMax_(mΩ):
31
- VGS(th)_(V):
±20
- CISS_(pF):
625
- QG_(nC):
13.9
- PD_(W):
2.5
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NCE |
20+ |
TO-252 |
36900 |
原裝優(yōu)勢主營型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
NCE/新潔能 |
22+ |
S0T-23 |
30000 |
原裝正品 |
詢價(jià) | ||
NCE/新潔能 |
23+ |
SOP-8 |
9600 |
十七年VIP會(huì)員,誠信經(jīng)營,一手貨源,原裝正品可零售! |
詢價(jià) | ||
NCE |
22+ |
TO-252 |
25000 |
只有原裝絕對原裝,支持BOM配單! |
詢價(jià) | ||
NCE新潔能 |
2023+ |
SOT-23 |
8800 |
正品渠道現(xiàn)貨 終端可提供BOM表配單。 |
詢價(jià) | ||
NCE/新潔能 |
2024 |
DFN3.3X3.3 |
38800 |
15余年信譽(yù)價(jià)格市場最低 力挺實(shí)單提供一站式BOM配單服務(wù)! |
詢價(jià) | ||
NCE/新潔能 |
ROHS .original |
SOT-23(SOT-23-3) |
12000 |
電子元器件供應(yīng)原裝現(xiàn)貨. 優(yōu)質(zhì)獨(dú)立分銷。原廠核心渠道 |
詢價(jià) | ||
NCE/新潔能 |
21+ |
SOT-23 |
30000 |
百域芯優(yōu)勢 實(shí)單必成 可開13點(diǎn)增值稅 |
詢價(jià) | ||
24+ |
N/A |
48000 |
一級(jí)代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
NCE/新潔能 |
25+ |
SOT23 |
54648 |
百分百原裝現(xiàn)貨 實(shí)單必成 歡迎詢價(jià) |
詢價(jià) |
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