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          首頁
                >MRF18>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          MRF182
          RF POWER FET TRANSISTOR
          
DESCRIPTION:
The ASI MRF182 is an RF power field effect transistor, N-Channel Enhancement-Mode lateral MOSFET.
FEATURES INCLUDE:
? Bradband performance from HF to 1 GHz
? Omnigold? Metalization System
? High Gain, Rugged device.
          文件：271.9 Kbytes 頁數(shù)：1 Pages
          ASI
          

          MRF182
          LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
          
? High Gain, Rugged Device
? Broadband Performance from HF to 1 GHz
? Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances
          文件：133.23 Kbytes 頁數(shù)：8 Pages
          MOTOROLA
          摩托羅拉
          

          MRF182S
          LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
          
? High Gain, Rugged Device
? Broadband Performance from HF to 1 GHz
? Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances
          文件：133.23 Kbytes 頁數(shù)：8 Pages
          MOTOROLA
          摩托羅拉
          

          MRF183
          LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
          
Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment.
? Guaranteed Performance at 945 MHz, 28 Vol
          文件：221.19 Kbytes 頁數(shù)：10 Pages
          MOTOROLA
          摩托羅拉
          

          MRF183LSR1
          RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
          
Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 28 volt base station equipment.
? Guaranteed Performance at 945 MHz, 28 Vol
          文件：996.33 Kbytes 頁數(shù)：12 Pages
          MOTOROLA
          摩托羅拉
          

          MRF183R1
          RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
          
Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 28 volt base station equipment.
? Guaranteed Performance at 945 MHz, 28 Vol
          文件：996.33 Kbytes 頁數(shù)：12 Pages
          MOTOROLA
          摩托羅拉
          

          MRF183S
          LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
          
Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment.
? Guaranteed Performance at 945 MHz, 28 Vol
          文件：221.19 Kbytes 頁數(shù)：10 Pages
          MOTOROLA
          摩托羅拉
          

          MRF184
          LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
          
Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common source amplifier applications in 28 volt base station equipment.
? Guaranteed Performance @ 945 MHz, 28 Volts
          文件：194.51 Kbytes 頁數(shù)：9 Pages
          MOTOROLA
          摩托羅拉
          

          MRF184R1
          N-Channel Enhancement-Mode Lateral MOSFETs
          
Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt base station equipment.
? Guaranteed Performance @ 945 MHz, 28 Volt
          文件：1.01553 Mbytes 頁數(shù)：12 Pages
          MOTOROLA
          摩托羅拉
          

          MRF184S
          LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
          
Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common source amplifier applications in 28 volt base station equipment.
? Guaranteed Performance @ 945 MHz, 28 Volts
          文件：194.51 Kbytes 頁數(shù)：9 Pages
          MOTOROLA
          摩托羅拉
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • Output Power：
            30W
          • Number of Elements per Chip：
            1
          • Maximum Gate Source Voltage：
            ±20V
          • Maximum Frequency：
            1000MHz
          • Maximum Drain Source Voltage：
            65V
          • Configuration：
            Single
          • Channel Type：
            N
          • Channel Mode：
            Enhancement
          
            
          
        
          
            
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