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          首頁
                >MRF18>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          MRF18085AR3
          RF Power Field Effect Transistors
          
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu
          文件：379.56 Kbytes 頁數(shù)：8 Pages
          MOTOROLA
          摩托羅拉
          

          MRF18085AR3
          The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
          
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu
          文件：409.77 Kbytes 頁數(shù)：8 Pages
          MOTOROLA
          摩托羅拉
          

          MRF18085B
          RF Power Field Effect Transistors
          
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
? GSM and GSM EDGE Performance, Full F
          文件：610.58 Kbytes 頁數(shù)：12 Pages
          MOTOROLA
          摩托羅拉
          

          MRF18085B
          RF Power Field Effect Transistors
          
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
? GSM and GSM EDGE Performance, Full Frequency Band (193
          文件：445.63 Kbytes 頁數(shù)：12 Pages
          FREESCALEFreescale Semiconductor, Inc
          飛思卡爾飛思卡爾半導體
          

          MRF18085BLR3
          RF Power Field Effect Transistors
          
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
? GSM and GSM EDGE Performance, Full Frequency Band (193
          文件：445.63 Kbytes 頁數(shù)：12 Pages
          FREESCALEFreescale Semiconductor, Inc
          飛思卡爾飛思卡爾半導體
          

          MRF18085BLSR3
          RF Power Field Effect Transistors
          
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
? GSM and GSM EDGE Performance, Full Frequency Band (193
          文件：445.63 Kbytes 頁數(shù)：12 Pages
          FREESCALEFreescale Semiconductor, Inc
          飛思卡爾飛思卡爾半導體
          

          MRF18085BLSR3
          RF Power Field Effect Transistors
          
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
? GSM and GSM EDGE Performance, Full F
          文件：610.58 Kbytes 頁數(shù)：12 Pages
          MOTOROLA
          摩托羅拉
          

          MRF18085BR3
          RF Power Field Effect Transistors
          
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
? GSM and GSM EDGE Performance, Full F
          文件：610.58 Kbytes 頁數(shù)：12 Pages
          MOTOROLA
          摩托羅拉
          

          MRF18090A
          RF Power Field Effect Transistor
          
1.80-1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET
Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio applications.

          文件：388.59 Kbytes 頁數(shù)：8 Pages
          FREESCALEFreescale Semiconductor, Inc
          飛思卡爾飛思卡爾半導體
          

          MRF18090AR3
          RF Power Field Effect Transistor
          
1.80-1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET
Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio applications.

          文件：388.59 Kbytes 頁數(shù)：8 Pages
          FREESCALEFreescale Semiconductor, Inc
          飛思卡爾飛思卡爾半導體
          

          
            
          
		
        
          
            
          
                
          技術參數(shù)
          
            
          
            
            
            	
          • Output Power：
            30W
          • Number of Elements per Chip：
            1
          • Maximum Gate Source Voltage：
            ±20V
          • Maximum Frequency：
            1000MHz
          • Maximum Drain Source Voltage：
            65V
          • Configuration：
            Single
          • Channel Type：
            N
          • Channel Mode：
            Enhancement
          
            
          
        
          
            
          供應商型號品牌批號封裝庫存備注價格
          
                
          



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