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                >MRF18>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          MRF18060BLSR3
          RF Power Field Effect Transistor
          
Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL applications. Specified for GSM 1930 - 1990 MHz.

? GSM Performance, Full Fre
          文件：332.4 Kbytes 頁數(shù)：12 Pages
          FREESCALEFreescale Semiconductor, Inc
          飛思卡爾飛思卡爾半導(dǎo)體
          

          MRF18060BLSR3
          RF Power Field Effect Transistors
          
Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz.
? GSM Performance, Full Frequency
          文件：490.03 Kbytes 頁數(shù)：8 Pages
          MOTOROLA
          摩托羅拉
          

          MRF18060BR3
          RF Power Field Effect Transistors
          
Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz.
? GSM Performance, Full Frequency
          文件：490.03 Kbytes 頁數(shù)：8 Pages
          MOTOROLA
          摩托羅拉
          

          MRF18060BSR3
          RF Power Field Effect Transistors
          
Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz.
? GSM Performance, Full Frequency
          文件：490.03 Kbytes 頁數(shù)：8 Pages
          MOTOROLA
          摩托羅拉
          

          MRF18085A
          RF Power Field Effect Transistors
          
Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM - GSM EDGE 1805-1880 MHz.
? GSM and GSM EDGE P
          文件：394.89 Kbytes 頁數(shù)：8 Pages
          FREESCALEFreescale Semiconductor, Inc
          飛思卡爾飛思卡爾半導(dǎo)體
          

          MRF18085A
          The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
          
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu
          文件：409.77 Kbytes 頁數(shù)：8 Pages
          MOTOROLA
          摩托羅拉
          

          MRF18085ALR3
          RF Power Field Effect Transistors
          
Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM - GSM EDGE 1805-1880 MHz.
? GSM and GSM EDGE P
          文件：394.89 Kbytes 頁數(shù)：8 Pages
          FREESCALEFreescale Semiconductor, Inc
          飛思卡爾飛思卡爾半導(dǎo)體
          

          MRF18085ALSR3
          RF Power Field Effect Transistors
          
Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM - GSM EDGE 1805-1880 MHz.
? GSM and GSM EDGE P
          文件：394.89 Kbytes 頁數(shù)：8 Pages
          FREESCALEFreescale Semiconductor, Inc
          飛思卡爾飛思卡爾半導(dǎo)體
          

          MRF18085ALSR3
          RF Power Field Effect Transistors
          
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu
          文件：379.56 Kbytes 頁數(shù)：8 Pages
          MOTOROLA
          摩托羅拉
          

          MRF18085ALSR3
          The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
          
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu
          文件：409.77 Kbytes 頁數(shù)：8 Pages
          MOTOROLA
          摩托羅拉
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • Output Power：
            30W
          • Number of Elements per Chip：
            1
          • Maximum Gate Source Voltage：
            ±20V
          • Maximum Frequency：
            1000MHz
          • Maximum Drain Source Voltage：
            65V
          • Configuration：
            Single
          • Channel Type：
            N
          • Channel Mode：
            Enhancement
          
            
          
        
          
            
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