RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. ? GSM and GSM EDGE Performance, Full Frequency Band (193

文件：445.63 Kbytes 頁數(shù)：12 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. ? GSM and GSM EDGE Performance, Full F

文件：610.58 Kbytes 頁數(shù)：12 Pages

MOTOROLA

摩托羅拉

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. ? GSM and GSM EDGE Performance, Full Frequency Band (193

文件：445.63 Kbytes 頁數(shù)：12 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. ? GSM and GSM EDGE Performance, Full F

文件：610.58 Kbytes 頁數(shù)：12 Pages

MOTOROLA

摩托羅拉

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. ? GSM and GSM EDGE Performance, Full Frequency Band (193

文件：445.63 Kbytes 頁數(shù)：12 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. ? GSM and GSM EDGE Performance, Full F

文件：610.58 Kbytes 頁數(shù)：12 Pages

MOTOROLA

摩托羅拉

RF Power Field Effect Transistors

恩XP

1930-1990 MHz, 85 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

Overview MRF18085BLR3, MRF18085BLSR3 removed from active portfolio. View replacement parts via Part Number Search. \n?GSM and GSM EDGE Performance,Full Frequency Band (1930–1990 MHz) \n\n\nPower Gain: 12.5 dB (Typ) @ 85 Watts CW\n\nEfficiency: 50% (Typ) @ 85 Watts CW\n\n\n\n\n?Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 85 Watts CW Output Power\n\n\n?Internally Matched for Ease of Use\n\n\n?High Gain, ;

恩XP