Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960-1215MHz

Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960–1215MHz Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. ? Guaranteed performance @ 1.215 GHz, 36 Vdc Output power = 120 W Peak Gain = 7.6 dB min., 8 .5 dB (ty

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MICROWAVE POWER TRANSISTOR

The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. ? Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 8.0 dB Min., 9.2 dB (Typ) ? 100 Tested for

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MOTOROLA

摩托羅拉

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. ? Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 7.6 dB Min., 8.5 dB (Typ) ? 100 Tested fo

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MACOM

Microwave Long Pulse Power Silicon NPN Transistor

文件：171.98 Kbytes 頁數(shù)：5 Pages

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Bipolar

Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. ·Guaranteed Performance @ 1.215 GHz, 36 Vdc\n·Silicon Nitride Passivated\n·Hermetically Sealer Industry Standard Package\n·100% Tested for Load Mismatch at all Phases Angles with 3:1 VSWR\n·Gain = 7.6 dB min., 8 .5 dB (typ.)\n·Output Power = 120 W Peak\n·Internal Input and Output Matching for Br;

MACOM

Package：355C-02；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 射頻 描述：RF TRANS NPN 55V 355C-02

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Microwave Long Pulse Power Silicon NPN Transistor

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