The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement-Mode Lateral MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common

文件：446.2 Kbytes 頁(yè)數(shù)：8 Pages

MOTOROLA

摩托羅拉

1.0 GHz, 120 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

Overview \"MRF186\" removed from active portfolio. Possible Replacement Part: \"MRF9120LR3\".The MRF186 is designed for broadband commercialand industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this device makes it ideal for large–signal, co \n?Guaranteed Performance @ 960 MHz, 28 Volts\n Output Power — 120 Watts (PEP)\n\tPower Gain — 11 dB\n\tEfficiency — 30%\n\tIntermodulation Distortion — ?–28 dBc\n?Excellent Thermal Stability\n?100% Tested for Load Mismatch Stress at all Phase Angles with\n\t5:1 VSWR @ 28 Vdc, 960 MHz, 120 W;

恩XP

DUAL HIGH VOLTAGE/ VERY HIGH CURRENT OPERATIONAL AMPLIFIER

DESCRIPTION: The MSK 186 is a dual high power operational amplifier ideal for use with a wide variety of loads. With operation from either single or dual supplies, it offers excellent design flexibility. Power dissipation is kept to a minimum with a quiescent current rating of only 26mA per ampli

文件：621.51 Kbytes 頁(yè)數(shù)：6 Pages

MSK

DUAL HIGH VOLTAGE

文件：221.19 Kbytes 頁(yè)數(shù)：7 Pages

ANAREN

DUAL HIGH VOLTAGE/ VERY HIGH CURRENT OPERATIONAL AMPLIFIER

DESCRIPTION: The MSK 186 is a dual high power operational amplifier ideal for use with a wide variety of loads. With operation from either single or dual supplies, it offers excellent design flexibility. Power dissipation is kept to a minimum with a quiescent current rating of only 26mA per ampli

文件：621.51 Kbytes 頁(yè)數(shù)：6 Pages

MSK