RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source

文件：360.77 Kbytes 頁(yè)數(shù)：8 Pages

MOTOROLA

摩托羅拉

1.0 GHz, 85 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

Overview \"MRF187\" removed from active portfolio. Possible Replacement Part: \"MRF9085LR3\". \"MRF187R3\" removed from active portfolio. Possible Replacement Part: \"MRF9085LR3\".The MRF187 is designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain \n?Guaranteed Performance @ 880 MHz, 26 Volts\n\t???Output Power — 85 Watts (PEP)\n\t???Power Gain — 12 dB\n\t???Efficiency — 30%\n\t???Intermodulation Distortion — ?–28 dBc\n?100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, 880 MHz, 85 Watts CW\n?Excellent Th;

恩XP

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source

文件：360.77 Kbytes 頁(yè)數(shù)：8 Pages

MOTOROLA

摩托羅拉

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source

文件：360.77 Kbytes 頁(yè)數(shù)：8 Pages

MOTOROLA

摩托羅拉

1.0 GHz, 85 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

Overview \"MRF187SR3\" removed from active portfolio. Possible Replacement Part: \"MRF9085LSR3\".The MRF187SR3 is designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common \n?Guaranteed Performance @ 880 MHz, 26 Volts\n\t???Output Power — 85 Watts (PEP)\n\t???Power Gain — 12 dB\n\t???Efficiency — 30%\n\t???Intermodulation Distortion — ?–28 dBc\n?100% Tested for Load Mismatch Stress at all Phase Angles with\n\t5:1 VSWR @ 26 Vdc, 880 MHz, 85 Watts CW\n?Excellent;

恩XP